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RM10Z

RM10Z

  • 厂商:

    EIC

  • 封装:

  • 描述:

    RM10Z - SILICON RECTIFIER DIODES - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
RM10Z 数据手册
RM10 - RM10Z PRV : 200 - 800 Volts Io : 1.2 - 1.5 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIER DIODES D2 0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN. 0.284 (7.20) 0.268 (6.84) MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherw ise specified. Single phase, half w ave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 70 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.5 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF RM10Z 200 140 200 1.5 RM10 400 280 400 RM10A 600 420 600 1.2 RM10B 800 560 800 UNIT Volts Volts Volts Amps. IFSM VF IR IR(H) CJ RθJA TJ TSTG 120 0.91 10 50 30 50 150 Amps. Volts µA µA pF °C/W °C °C Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range - 65 to + 175 - 65 to + 175 Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0V DC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. UPDATE : MAY 27, 1998 RATING AND CHARACTERISTIC CURVES ( RM10 - RM10Z ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 1.5 150 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 8.3 ms SINGLE HALF SINE WAVE Ta = 50 °C 120 RM10 - RM10B 90 RM10Z 1.2 RM10 - RM10B 0.9 0.6 60 RM10Z 30 0.3 60 Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz 100 REVERSE CURRENT, MICROAMPERES FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS 10 TJ = 100 °C FORWARD CURRENT, AMPERES 10 1.0 0.1 TJ = 25 °C 1.0 Pulse Width = 300 µ s 2% Duty Cycle 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 FORWARD VOLTAGE, VOLTS
RM10Z 价格&库存

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