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RM10_05

RM10_05

  • 厂商:

    EIC

  • 封装:

  • 描述:

    RM10_05 - SILICON RECTIFIER DIODES - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
RM10_05 数据手册
RM10 - RM10Z PRV : 200 - 800 Volts Io : 1.2 - 1.5 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free SILICON RECTIFIER DIODES D2 1.00 (25.4) MIN. 0.161 (4.10) 0.154 (3.90) 0.284 (7.20) 0.268 (6.84) MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 70 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.5 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF RM10Z 200 140 200 1.5 RM10 400 280 400 RM10A 600 420 600 1.2 RM10B 800 560 800 UNIT V V V A IFSM VF IR IR(H) CJ RθJA TJ TSTG 120 0.91 10 50 30 50 150 A V µA µA pF °C/W °C °C Typical Junction Capacitance (Note1) - 65 to + 175 - 65 to + 175 Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. Page 1 of 2 Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( RM10 - RM10Z ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 1.5 150 RM10Z FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 8.3 ms SINGLE HALF SINE WAVE Ta = 50 °C 120 RM10 - RM10B 90 1.2 RM10 - RM10B 0.9 0.6 60 RM10Z 30 0.3 60 Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS 10 FORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES TJ = 100 °C 10 1.0 0.1 TJ = 25 °C 1.0 Pulse Width = 300 µs 2% Duty Cycle 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 25, 2005
RM10_05 价格&库存

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RM10JTN100
  •  国内价格
  • 100+0.034
  • 500+0.032
  • 1000+0.029
  • 5000+0.025
  • 10000+0.0226

库存:0