0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
RM11

RM11

  • 厂商:

    EIC

  • 封装:

  • 描述:

    RM11 - SILICON RECTIFIER DIODES - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
RM11 数据手册
RM11A - RM11C PRV : 600 - 1000 Volts Io : 1.2 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIER DIODES D2 0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN. 0.284 (7.20) 0.268 (6.84) MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 70 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.5 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range Notes : Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF RM11A 600 420 600 RM11B 800 560 800 1.2 RM11C 1000 700 1000 UNITS V V V A IFSM VF IR IR(H) CJ RθJA TJ TSTG 100 0.92 10 50 30 50 - 65 to + 175 - 65 to + 175 A V µA µA pF °C/W °C °C (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. Page 1 of 2 Rev. 01 : Mar 23, 2002 RATING AND CHARACTERISTIC CURVES ( RM11A - RM11C ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 1.5 100 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 8.3 ms SINGLE HALF SINE WAVE 80 AVERAGE FORWARD OUTPUT CURRENT, AMPERES 1.2 0.9 60 Ta = 50 ° C 40 0.6 0.3 RESISTIVE OR INDUCTIVE LOAD 0 20 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES 10 TJ = 100 °C FORWARD CURRENT, AMPERES 10 1.0 1.0 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 120 140 Pulse W idth = 300 µs 2% Duty Cycle 0.1 TJ = 25 °C PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 01 : Mar 23, 2002
RM11
1. 物料型号:RM11A、RM11B、RM11C,分别对应不同的最大重复峰值反向电压等级。

2. 器件简介:这些是硅整流二极管,具备高电流能力、高浪涌电流能力、高可靠性、低反向电流和低正向电压降的特点。

3. 引脚分配:二极管具有轴向引脚,可焊性符合MIL-STD-202标准,极性由色带表示阴极端。

4. 参数特性: - 最大重复峰值反向电压(VRRM):RM11A为600V,RM11B为800V,RM11C为1000V。 - 最大RMS电压(VRMS):RM11A为420V,RM11B为560V,RM11C为700V。 - 最大直流阻断电压(Voc):与VRRM相同。 - 最大平均正向电流(IF):1.2A(对于RM11B)。 - 正向峰值浪涌电流(IFSM):RM11B为100A。 - 最大正向电压(VF)在1.5A时:RM11B为0.92V。 - 最大直流反向电流(IR):25°C时10μA,100°C时50μA。 - 典型结电容(CJ):30pF。 - 典型热阻(ROJA):50°C/W。 - 结温范围(TJ):-65°C至+175°C。 - 存储温度范围(TSTG):与结温范围相同。

5. 功能详解:文档提供了输出整流电流的降额曲线、最大非重复峰值正向浪涌电流、典型正向特性和典型反向特性的图表。

6. 应用信息:这些二极管适用于单相、半波、60Hz的电阻性或感性负载,对于电容器负载,电流需要降额20%。

7. 封装信息:封装为D2型模塑塑料,环氧树脂符合UL94V-0级阻燃等级,引脚为轴向引脚,可按照MIL-STD-202标准208方法保证焊接。

很抱歉,暂时无法提供与“RM11”相匹配的价格&库存,您可以联系我们找货

免费人工找货