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RM11C

RM11C

  • 厂商:

    EIC

  • 封装:

  • 描述:

    RM11C - SILICON RECTIFIER DIODES - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
RM11C 数据手册
RM11A - RM11C PRV : 600 - 1000 Volts Io : 1.2 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIER DIODES D2 0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN. 0.284 (7.20) 0.268 (6.84) MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 70 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.5 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range Notes : Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF RM11A 600 420 600 RM11B 800 560 800 1.2 RM11C 1000 700 1000 UNITS V V V A IFSM VF IR IR(H) CJ RθJA TJ TSTG 100 0.92 10 50 30 50 - 65 to + 175 - 65 to + 175 A V µA µA pF °C/W °C °C (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. Page 1 of 2 Rev. 01 : Mar 23, 2002 RATING AND CHARACTERISTIC CURVES ( RM11A - RM11C ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 1.5 100 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 8.3 ms SINGLE HALF SINE WAVE 80 AVERAGE FORWARD OUTPUT CURRENT, AMPERES 1.2 0.9 60 Ta = 50 ° C 40 0.6 0.3 RESISTIVE OR INDUCTIVE LOAD 0 20 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES 10 TJ = 100 °C FORWARD CURRENT, AMPERES 10 1.0 1.0 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 120 140 Pulse W idth = 300 µs 2% Duty Cycle 0.1 TJ = 25 °C PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 01 : Mar 23, 2002
RM11C 价格&库存

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