RMB4S

RMB2S - RMB4S PRV : 200 - 400 Volts Io : 0.5 Ampere Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier MBS 0.029(0.74) 0.017(0.43) FEATURES : * Glass passivated chip junctions. * High surge overload rating : 35A peak * Saves space on printed circuit boards. * High temperature soldering guaranteed : 260 oC/10 seconds. * Pb / RoHS Free 0.161(4.10) 0.144(3.65) ~ ~ 0.272(6.90) 0.252(6.40) 0.105(2.67) 0.095(2.41) 0.195(4.95) 0.179(4.55) 0.106(2.70) 0.094(2.40) 0.114(2.90) 0.094(2.40) 0.205(5.21) 0.195(4.95) MECHANICAL DATA : * Case : Molded plastic * Epoxy : UL94V-O rate flame retardant * Terminals : Plated Lead solderable per MIL-STD-750, Method 2026 * Polarity : Polarity symbols marked on body * Mounting position : Any * W eight : 0.22 gram 0.016(0.41) 0.006(0.15) Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25°C ambient temperature unless otherwise specified. 60 Hz, resistive or inductive load. RATING Device Marking Code Maximum Repetitive Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Output Rectified Current (See Fig.1) Maximum Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Rating for fusing (t < 8.3 ms.) Maximum Instantaneous Forward Voltage per element at IF = 0.4 A Maximum DC Reverse Current Ta = 25°C at Rated DC Blocking Voltage Ta = 125°C Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A Typical Junction Capacitance per element Typical Thermal Resistance Junction and Storage Temperature Range SYMBOL VRRM VRMS VDC IF(AV) RMB2S 2R 200 140 200 RMB4S 4R 400 280 400 UNIT V V V A 0.5 (1) (on glass-epoxy P.C.B.) 0.8 (2) (on aliminum substrate) 30 5.0 1.25 5.0 100 150 13 (3) 85 (1) -55 to + 150 IFSM I2t VF IR IR(H) Trr Cj RθJA TJ, TSTG A A 2S V µA µA ns pF °C/W °C Notes : (1) On glass epoxy P.C Board mounted on 0.5" x 0.5" (13mm x 13mm) Pads. (2) On aluminum substrate P.C.B. with an area 0.8" x 0.8" (20mm x 20mm) mounted on 0.5" x 0.5" (13mm x 13mm) Pads. (3) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC Page 1 of 2 Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( RMB2S - RMB4S ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 1.0 Aluminum Substrate 0.8 35 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PER BRIDGE ELEMENT PEAK FORWARD SURGE CURRENT, AMPERES 28 0.6 21 0.4 Glass Epoxy P.C.B. 14 Ta = 40°C Single Half Sine-Wave (JEDEC Method) 0.2 Resistive or Inductive Load 0 0 25 50 75 100 125 150 175 7 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, (°C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER BRIDGE ELEMENT 10 100 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES INSTANTANEOUS FORWARD CURRENT, AMPERES TJ = 125°C 1 10 Pulse Width = 300 µ s 1% Duty Cycle 0.1 1.0 TJ = 25°C TJ = 25°C 0.1 0.01 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 FORWARD VOLTAGE, VOLTS 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 02 : March 24, 2005