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S1G

S1G

  • 厂商:

    EIC

  • 封装:

  • 描述:

    S1G - SURFACE MOUNT RECTIFIERS - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
S1G 数据手册
Certificate TH97/10561QM Certificate TW00/17276EM S1A ~ S1M PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free SURFACE MOUNT RECTIFIERS SMA 1.3 ± 0.2 5.4 ± 0.2 4.4 ± 0.2 2.3 ± 0.2 1.8 ± 0.2 2.7 ± 0.2 1.8 ± 0.2 MECHANICAL DATA : * Case : SMA Molded plastic * Epoxy : UL94V-O rate flame retardant * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.060 gram (Approximately) Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current (See fig. 1) Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) TL = 110 °C Maximum Instantaneous Forward Voltage at I F = 1.0 A. Maximum DC Reverse Current at rated DC Blocking Voltage Ta = 25 °C Ta = 125 °C SYMBOL S1A VRRM VRMS VDC IF IFSM VF IR IR(H) Trr RθJA RθJL CJ TJ TSTG 50 35 50 S1B 100 70 100 S1D 200 140 200 S1G 400 280 400 1.0 S1J 600 420 600 S1K 800 560 800 S1M 1000 700 1000 UNIT V V V A 40 1.1 1.0 50 1.8 75 27 12 - 55 to + 150 - 55 to + 150 30 A V 5.0 μA μA μs Typical Reverse Recovery Time (Note 1) Typical thermal resistance (Note 2) Typical Junction Capacitance at 4.0V, 1 MHz Junction Temperature Range Storage Temperature Range Notes : 85 30 °C/W °C/W pF °C °C (1) Reverse Recovery Test Conditions : IF = 0.5 A, I R = 1.0 A, Irr = 0.25 A. (2) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas Page 1 of 2 Rev. 04 : October 26, 2006 Certificate TH97/10561QM Certificate TW00/17276EM RATING AND CHARACTERISTIC CURVES ( S1A - S1M ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 1.0 50 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES S1A - S1J S1K - S1M 0.8 40 TL = 110°C 8.3ms Single Half Sine-Wave (JEDEC Method) S1A - S1J 0.6 30 0.4 20 S1K - S1M 10 0.2 0.2 x 0.2" (5.0 x 5.0mm) Thick Copper Pad Areas 0 25 50 75 100 125 150 175 0 0 1 2 4 6 10 20 40 60 100 LEAD TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS 10 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS FORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES Ta = 125 °C 1.0 1.0 Pulse Width = 300 μs 2% Duty Cycle 0.1 TJ = 25 °C 0.1 Ta = 25 °C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0 20 40 60 80 100 120 INSTANTANEOUS FORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE VOLTAGE, (%) FIG. 5 – TYPICAL JUNCTION CAPACITANCE 100 JUNCTION CAPACITANCE, pF TJ = 25°C f = 1.0 MHZ Vsig = 50mVp-p 10 1 0.01 0.1 1 10 100 REVERSE VOLTAGE, VOLTS Page 2 of 2 Rev. 04 : October 26, 2006

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S1G
  •  国内价格
  • 1+0.04649
  • 100+0.04339
  • 300+0.04029
  • 500+0.0372
  • 2000+0.03565
  • 5000+0.03472

库存:253

S1G
  •  国内价格
  • 5+0.73696
  • 20+0.66787
  • 100+0.59878
  • 500+0.52969
  • 1000+0.49745
  • 2000+0.47442

库存:10

S1g
  •  国内价格
  • 1+0.054
  • 100+0.0504
  • 300+0.0468
  • 500+0.0432
  • 2000+0.0414
  • 5000+0.04032

库存:0

S1G
  •  国内价格
  • 1+0.03499
  • 30+0.03374
  • 100+0.03249
  • 500+0.03
  • 1000+0.02875
  • 2000+0.028

库存:0

S1G
  •  国内价格
  • 1+0.22566
  • 10+0.21585

库存:0

ES1G
  •  国内价格
  • 1+0.04949
  • 100+0.04619
  • 300+0.04289
  • 500+0.0396
  • 2000+0.03795
  • 5000+0.03696

库存:0

ES1G
  •  国内价格
  • 1+0.05249
  • 100+0.04899
  • 300+0.04549
  • 500+0.042
  • 2000+0.04025
  • 5000+0.0392

库存:633