S1ZB20 - S1ZB80
PRV : 200 - 800 Volts Io : 0.8 Amperes
FEATURES :
* * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board Pb / RoHS Free
MINI-BRIDGE RECTIFIERS
MBS
0.029(0.74) 0.017(0.43) 0.023 min. (0.58 min.)
0.161(4.10) 0.144(3.65)
~
~
0.272(6.90) 0.252(6.40) 0.030 min. (0.76 min.)
0.272 max. (6.91 max.)
0.105(2.67) 0.095(2.41) 0.195(4.95) 0.179(4.55)
0.105(2.67) 0.095(2.41)
MECHANICAL DATA :
* Case : Molded plastic * Epoxy : UL94V-O rate flame retardant * Terminals : Plated Lead solderable per MIL-STD-202, Method 208 * Polarity : Polarity symbols marked on body * Mounting position : Any * Weight : 0.22 gram
0.106(2.70) 0.094(2.40) 0.114(2.90) 0.094(2.40)
0.205(5.21) 0.195(4.95) 0.049(1.24) 0.039(0.99) 0.016(0.41) 0.006(0.15)
0.0075(0.19) 0.0065(0.16)
0.038(0.96) 0.019(0.48)
Dimensions in inches and ( millimeters )
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Maximum Peak Forward Surge Current, Non-Repititive 1 Cycle Peak Value Current Squared Time at 1ms ≤ t < 10 ms. Maximum Forward Voltage per Diode at IF = 0.4 A Maximum DC Reverse Current at Rated DC Blocking Voltage Maximum Thermal Resistance, Junction to Lead Operating Junction Temperature Range Storage Temperature Range
SYMBOL VRRM VRMS VDC IF(AV)
S1ZB20 200 140 200
S1ZB60 600 420 600
S1ZB80 800 560 800
UNIT V V V A
0.5 (on glass-epoxy substrate) 0.8 (on aliminum substrate)
IFSM I2t VF IR RθJL TJ TSTG
30 4.5 1.05 10 20 - 40 to + 150 - 40 to + 150
A A 2S V µA °C/W °C °C
Page 1 of 2
Rev. 02 : March 24, 2005
RATING AND CHARACTERISTIC CURVES ( S1ZB20 - S1ZB80 )
FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT
1.0 Aluminum Substrate 0.8 30
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PER BRIDGE ELEMENT PEAK FORWARD SURGE CURRENT, AMPERES
AVERAGE FORWARD OUTPUT CURRENT, AMPERES
24
0.6
18
0.4
Glass Epoxy Substrate
12
Ta = 40 °C Single Half Sine-Wave (JEDEC Method)
0.2 Resistive Load 0 0 25 50 75 100 125 150 175
6
0
1
2
4
6
10
20
40
60
100
AMBIENT TEMPERATURE, ( °C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER BRIDGE ELEMENT
10
100 TJ = 125 °C
INSTANTANEOUS REVERSE CURRENT, MICROAMPERES
INSTANTANEOUS FORWARD CURRENT, AMPERES
1
10
Pulse Width = 300 µ s 1% Duty Cycle 0.1
1.0
TL = 25 °C
TJ = 25 °C 0.1
0.01 0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE, VOLTS
0.01 0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
Page 2 of 2
Rev. 02 : March 24, 2005
很抱歉,暂时无法提供与“S1ZB20_05”相匹配的价格&库存,您可以联系我们找货
免费人工找货