S5277J

S5277J

  • 厂商:

    EIC

  • 封装:

  • 描述:

    S5277J - SILICON RECTIFIER DIODES - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
S5277J 数据手册
Certificate : TH97/10561QM Certificate : TW00/17276EM S5277B/G/J/N PRV : 100 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free SILICON RECTIFIER DIODES DO - 41 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2) 0.161 (4.1) 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.339 gram Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25°C ambient temperature unless otherwise specified. RATING Maximum Repetitive Peak Reverse Voltage Maximum Average Forward Current Maximum Peak One Cycle Surge Forward Current (Non-Repetitive) Peak Forward Voltage at IF = 1.0 A Repetitive Peak Reverse Current Thermal Resistance (Junction to Ambient) Junction Temperature Range Storage Temperature Range SYMBOL S5277B S5277G S5277J S5277N VRRM IF(AV) (50Hz) (60Hz) UNIT V A 100 400 1.0 600 1000 (50Hz) (60Hz) IFSM VF IRRM Rth (j-a) TJ TSTG 50 55 1.2 10 120 30 33 A V µA °C/W °C °C - 40 to + 150 - 40 to + 150 Page 1 of 2 Rev. 00 : May 30, 2007 Certificate : TH97/10561QM Certificate : TW00/17276EM RATING AND CHARACTERISTIC CURVES ( S5277B/G/J/N ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 1.0 60 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT AVERAGE FORWARD CURRENT, (A) Tj = 25 °C 0.8 PEAK FORWARD SURGE CURRENT, AMPERES 50 0.6 40 (60 Hz) S5277B S5277G 0.4 30 0.2 20 S5277J S5277N 50 Hz 0 0 25 50 75 100 125 150 175 10 1 10 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 50Hz AND 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS 10 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS FORWARD CURRENT, (A) TJ = 100 °C 10 REVERSE CURRENT, (µA) 1.0 1.0 TJ = 25 °C 0.1 TJ = 25 °C 0.1 0.4 0.01 0.8 1.2 1.6 2.0 2.4 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, (V) PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 00 : May 30, 2007
S5277J
物料型号: - S5277B/G/J/N

器件简介: - 这些是硅整流二极管,具有高电流能力、高浪涌电流能力、高可靠性、低反向电流和低正向电压降的特点,并且不含铅/符合RoHS标准。

引脚分配: - 轴向引脚,可焊接,符合MIL-STD-202标准方法208。

参数特性: - 最大重复峰值反向电压(VRRM):S5277B为100V,S5277G为400V,S5277J为600V,S5277N为1000V。 - 最大平均正向电流(IF(AV)):S5277B为1.0A。 - 最大非重复峰值正向浪涌电流(IFSM):S5277B为50A(50Hz)/55A(60Hz)。 - 正向电压在IF=1.0A时(VF):S5277B为1.2V。 - 重复峰值反向电流(RRM):S5277B为10A。 - 热阻(Junction到Ambient):S5277B为120°C/W。 - 结温范围(TJ):-40至+150°C。 - 储存温度范围(TSTG):-40至+150°C。

功能详解: - 这些二极管适用于需要高电流和高浪涌电流能力的整流应用。

应用信息: - 任何安装位置,重量为0.339克。

封装信息: - 封装类型为DO-41模塑塑料,环氧树脂为UL94V-0级阻燃,颜色带表示阴极端。
S5277J 价格&库存

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