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S5566G

S5566G

  • 厂商:

    EIC

  • 封装:

  • 描述:

    S5566G - SILICON RECTIFIER DIODES - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
S5566G 数据手册
S5566B/G/J/N PRV : 100 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free SILICON RECTIFIER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.339 gram Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 50 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Maximum DC Blocking Voltage Maximum Average Forward Current Maximum Peak Forward Surge Current Single half sine wave superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.0 A Maximum Repetitive Peak Reverse Current Junction Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IF(AV) S5566B 100 70 100 S5566G 400 280 400 1.0 S5566J 600 420 600 S5566N 1000 700 1000 UNIT V V V A (50Hz) (60Hz) (50Hz) (60Hz) IFSM VF IRRM TJ TSTG 45 49 1.2 10 30 33 A V µA °C °C - 40 to + 150 - 40 to + 150 Page 1 of 2 Rev. 01 : April 2, 2002 R ATING AND CHARACTERISTIC CURVES (S5566B/G/J/N) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 1.0 50 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES Tj = 25 ° C 40 AVERAGE FORWARD OUTPUT CURRENT, AMPERES 0 .8 60 Hz 30 0.6 0.4 20 S5566B S5566G 50 Hz S5566J S5566N 0.2 10 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 50Hz AND 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FORWARD CURRENT, AMPERES 10 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS TJ = 1 00 ° C 10 REVERSE CURRENT, MICROAMPERES 1.0 1.0 TJ = 2 5 ° C 0.1 TJ = 2 5 °C 0.1 0.4 0.01 0.8 1.2 1.6 2.0 2.4 0 20 40 60 80 100 120 140 F ORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE VOLTAGE, (%) P age 2 of 2 Rev. 01 : April 2, 2002
S5566G
### 物料型号 - S5566B/G/J/N

### 器件简介 - 该器件为硅整流二极管,采用DO-41封装。

### 引脚分配 - 轴向引脚,可焊接,符合MIL-STD-202标准。 - 极性:通过颜色带表示阴极端。

### 参数特性 - 最大重复峰值反向电压(VRRM):100V、400V、600V、1000V - 最大RMS电压(VRMS):70V、280V、420V、700V - 最大直流阻断电压(VDc):100V、400V、600V、1000V - 最大平均正向电流(IF(AV)):1.0A - 最大正向峰值浪涌电流(IFSM):45A、49A、30A、33A(根据频率不同) - 最大正向电压在IF=1.0A时(VF):1.2V - 最大重复峰值反向电流(IRRM):10A

### 功能详解 - 该二极管具有高电流能力、高浪涌电流能力、高可靠性、低反向电流和低正向电压降。

### 应用信息 - 适用于需要高电流和高可靠性的整流应用。

### 封装信息 - 封装类型:DO-41模塑塑料 - 环氧树脂:UL94V-0级阻燃 - 引脚:轴向引脚,可焊接 - 极性标识:颜色带标识阴极端 - 安装位置:任意 - 重量:0.339克
S5566G 价格&库存

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