SD101CWS

Certificate TH97/10561QM Certificate TW00/17276EM SD101AWS - SD101CWS FEATURES : * For general purpose applications * The SD101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. * The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. * These diodes are also available in the MiniMELF case with type designations LL101A thru LL101C. * Pb / RoHS Free SCHOTTKY BARRIER DIODES SOD-323 0.40 0.25 1.80 1.60 1.35 1.15 MECHANICAL DATA : * Case : SOD-323 plastic Case * Weight : approx. 0.004 g * SD101AWS Marking Code : SJ * SD101BWS Marking Code : SK * SD101CWS Marking Code : SL 2.80 2.30 Dimensions in millimeters Maximum Ratings and Thermal Characteristics Parameter Repetitive Peak Reverse Voltage Maximum Single Cycle Surge 10 µs Square Wave Power Dissipation (Infinite Heat Sink) Thermal Resistance Junction to Ambient Air Junction Temperature Storage temperature range (TC = 25 °C unless otherwise noted) Symbol SD101AWS SD101BWS SD101CWS VRRM IFSM Ptot RӨJA TJ TSTG Value 60 50 40 2 150(1) 650(1) 125(1) -55 to + 150 0.15 (max) 1.10 0.80 Unit V A mW °C/W °C °C Electrical Characteristics Parameter Reverse Breakdown Voltage Reverse Current (TJ = 25 °C unless otherwise noted) Symbol SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS V(BR)R IR Test Condition IR = 10 μA VR = 50 V VR = 40 V VR = 30 V IF = 1mA Forward Voltage Drop VF IF = 15mA Ctot Trr VR = 0 V, f = 1 MHz IF = IR = 5mA , recover to 0.1IR Junction Capacitance Reverse Recovery Time Min 60 50 40 - Typ - Max 200 200 200 0.41 0.40 0.39 1.00 0.95 0.90 2.0 2.1 2.2 1 Unit V nA V pF ns Note: (1) Valid provided that electrodes are kept at ambient temperature. Page 1 of 2 Rev. 01 : May 4, 2006 Certificate TH97/10561QM Certificate TW00/17276EM RATING AND CHARACTERISTIC CURVES (SD101AWS - SD101CWS) Typical variation of forward current vs. forward voltage for primary conduction through the schottky barrier 10 5 Forward Current , IF (mA) 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0 0 0.5 Forward Voltage , VF (V) Typical capacitance curve as a function of reverse Voltage 1 0 0.5 Forward Voltage , VF (V) Typical variation of reverse current at various temperatures 1 SD101CWS Typical forward conduction curve of combination Schottky barrier and PN junction guard ring 100 SD101AWS SD101BWS Forward Current , IF (mA) SD101BWS 80 SD101CWS SD101AWS 60 40 20 2 Tj = 25°C 100 50 20 Ta = 125 °C Reverse Current , IR (μA) 10 5 2 1 0.5 0.2 0.1 0.05 0.02 Ta = 25 °C Ta = 100 °C Typical Capacitance , C T (pF) SD101BWS SD101CWS 1 SD101AWS 0 0 10 20 30 40 50 Reverse Voltage , VR (V) 0.01 0 10 20 30 40 50 Reverse Voltage , VR (V) Page 2 of 2 Rev. 01 : May 4, 2006