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SD103B

SD103B

  • 厂商:

    EIC

  • 封装:

  • 描述:

    SD103B - SCHOTTKY BARRIER DIODES - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
SD103B 数据手册
SD103A - SD103C FEATURES : • For general purpose applications • The SD103 series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. • Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems. • These diodes are also available in the MiniMELF case with type designations LL103A thru LL103C. • Pb / RoHS Free SCHOTTKY BARRIER DIODES DO - 35 Glass (DO-204AH) 0.079(2.0 )max. 1.00 (25.4) min. Cathode Mark 0.150 (3.8) max. 0.020 (0.52)max. 1.00 (25.4) min. MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at Parameter SD103A Repetitive Peak Reverse Voltage SD103B SD103C Single Cycle Surge 60 Hz Sine Wave Power Dissipation (Infinite Heatsink) Thermal Resistance Junction to Ambient Air Junction Temperature Storage temperature range 25 °C ambient temperature unless otherwise specified.) Symbol VRRM Value 40 30 20 Unit V IFSM PD RθJA TJ TS 15 400(1) 0.3(1) 125 (1) A mW °C/mW °C °C -55 to + 150 (1) Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature. Electrical Characteristics (TJ = 25°C unless otherwise noted) Parameter Reverse Current SD103A SD103B SD103C Symbol IR Test Condition V R = 30 V V R = 20 V V R = 10 V IF = 20mA IF = 200mA VR = 0 V, f = 1MHz IF = IR = 50mA to 200mA recover to 0.1IR Min - Typ 50 10 Max 5 5 5 0.37 0.6 - Unit µA Forward Voltage Drop Junction Capacitance Reverse Recovery Time VF Ctot Trr V pF ns Page 1 of 2 Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( SD103A - SD103C ) Typical variation of forward current and forward voltage for primary conduction through the schottky barrier 10 3 Typical high current forward conduction curve tp = 300ms , duty cycle = 2% 5 Forward Current , IF (mA) 10 Forward Current , IF (A) 10 2 4 3 1 2 10-1 1 10-2 0 0.5 Forward Voltage , VF (V) 1 0 0 0.5 1 1.5 Forward Voltage , VF (V) Blocking voltage deration versus temperature at various average forward currents 50 103 Typical variation of reverse current at various temperatures Ta =125°C 40 Reverse Voltage , V (V) R Reverse Current , IR (µA) 100 mA 102 30 200 mA IF=400 mA 10 20 10 1 25°C 0 0 100 Ambient Temperature, Ta (°C) 200 10-1 0 10 20 30 40 50 Reverse Voltage , VR (V) Page 1 of 2 Rev. 02 : March 24, 2005
SD103B 价格&库存

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SD103BW
  •  国内价格
  • 50+0.13072
  • 200+0.12255
  • 600+0.11438
  • 2000+0.10621
  • 5000+0.09804
  • 10000+0.09232

库存:2525

ESD103B102ELE6327XTMA1
  •  国内价格
  • 1+0.89181
  • 30+0.85996
  • 100+0.82811
  • 500+0.7644
  • 1000+0.73255
  • 2000+0.71344

库存:0