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SD103BWS

SD103BWS

  • 厂商:

    EIC

  • 封装:

  • 描述:

    SD103BWS - SCHOTTKY BARRIER DIODES - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
SD103BWS 数据手册
Certificate TH97/10561QM Certificate TW00/17276EM SD103AWS - SD103CWS FEATURES : * For general purpose applications * The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. * The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. * These diodes are also available in the MiniMELF case with type designations LL103A thru LL103C. * Pb / RoHS Free SCHOTTKY BARRIER DIODES SOD-323 0.40 0.15 (max) 2.80 2.30 0.25 1.80 1.60 1.35 1.10 MECHANICAL DATA : * Case : SOD-323 plastic Case * Weight : approx. 0.004 g * SD103AWS Marking Code : S4 * SD103BWS Marking Code : S5 * SD103CWS Marking Code : S6 0.80 1.15 Dimensions in millimeters Maximum Ratings and Thermal Characteristics Parameter Repetitive Peak Reverse Voltage Maximum Single Cycle Surge 10 µs Square Wave Power Dissipation (Infinite Heat Sink) Thermal Resistance Junction to Ambient Air Junction Temperature Storage temperature range (TC = 25 °C unless otherwise noted) Symbol SD103AWS SD103BWS SD103CWS VRRM IFSM Ptot RθJA TJ TSTG Value 40 30 20 2 150 650(1) (1) 125 -55 to + 150 (1) Unit V A mW °C/W °C °C Electrical Characteristics Parameter Reverse Current (TJ = 25°C unless otherwise noted) Symbol SD103AWS SD103BWS SD103CWS IR Test Condition VR = 30 V VR = 20 V VR = 10 V IF = 20mA IF = 200mA VR = 0 V, f = 1MHz IF = IR = 50mA to 200mA recover to 0.1IR Min - Typ 50 10 Max 5 5 5 0.37 0.60 - Unit μA Forward Voltage Drop Junction Capacitance Reverse Recovery Time Note: VF Ctot Trr V pF ns (1) Valid provided that electrodes are kept at ambient temperature. Page 1 of 2 Rev. 01 : May 4, 2006 Certificate TH97/10561QM Certificate TW00/17276EM RATING AND CHARACTERISTIC CURVES ( SD103AWS - SD103CWS ) Typical variation of forward current vs. forward voltage for primary conduction through the schottky barrier 103 5 Typical high current forward conduction curve tp = 300ms , duty cycle = 2% Forward Current , IF (mA) 10 2 4 Forward Current , IF (A) 10 3 1 2 10-1 10-2 0 1 0 0.5 Forward Voltage , VF (V) 1 0 0.5 1.0 1.5 Forward Voltage , VF (V) Blocking voltage deration versus temperature at various average forward currents 50 103 Typical variation of reverse current at various temperatures Ta =125°C 40 Reverse Voltage , VR (V) Reverse Current , IR (μA) 100 mA 102 30 200 mA IF=400 mA 10 20 10 1 25°C 0 0 100 Ambient Temperature, Ta (°C) 200 10-1 0 10 20 30 40 50 Reverse Voltage , VR (V) Page 1 of 2 Rev. 01 : May 4, 2006
SD103BWS 价格&库存

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