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SETE

SETE

  • 厂商:

    EIC

  • 封装:

  • 描述:

    SETE - SURFACE MOUNT HIGH EFFICIENT RECTIFIERS - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
SETE 数据手册
SETA - SETM PRV : 50 - 1000 Volts Io : 2.5 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency SURFACE MOUNT HIGH EFFICIENT RECTIFIERS SMB (DO-214AA) 1.1 ± 0.3 5.4 ± 0.15 4.8 ± 0.15 2.0 ± 0.1 3.6 ± 0.15 2.3 ± 0.2 0.22 ± 0.07 * Pb / RoHS Free MECHANICAL DATA : * Case : SMB Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Lead Formed for Surface Mount * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.1079 gram Dimensions in millimeter Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Ta = 55 °C Maximum Peak Forward Surge Current, 8.3ms Single half sine wave superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at IF = 2.5 A Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL SETA SETB SETD SETE SETG SETJ SETK SETM UNIT VRRM VRMS VDC IF(AV) IFSM VF IR IR(H) Trr 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 2.5 600 420 600 800 560 800 1000 700 1000 V V V A A 100 1.1 10 50 50 50 - 65 to + 150 - 65 to + 150 75 1.7 V µA µA ns pf °C °C Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Junction Temperature Range Storage Temperature Range CJ TJ TSTG Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Page 1 of 2 Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( SETA - SETM ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.5 D.U.T. 50 Vdc (approx) 1Ω PULSE GENERATOR ( NOTE 2 ) OSCILLOSCOPE ( NOTE 1 ) 0 - 0.25 Trr + - 1.0 A S ET TIME BASE FOR 25-35 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 2.5 100 FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 8.3 ms SINGLE HALF SINE WAVE Ta = 50 °C 80 2.0 1.5 60 1.0 40 0.5 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175 20 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) FIG.4 - TYPICAL FORWARD CHARACTERISTICS NUMBER OF CYCLES AT 60Hz FIG.5 - TYPICAL REVERSE CHARACTERISTICS 100 10 FORWARD CURRENT, AMPERES TJ = 2 5 °C 10 REVERSE CURRENT, MICROAMPERES Pulse W idth = 300 µs 2% Duty Cycle TJ = 1 00 °C 1.0 SETA - SETG 1.0 0.1 TJ = 2 5 °C SETJ - SETM 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 24, 2005
SETE
### 物料型号 - SETA - SETM

### 器件简介 - 表面贴装高效整流器,能够承受50至1000伏特的电压,电流为2.5安培,封装形式为SMB (DO-214AA)。

### 引脚分配 - 根据封装SMB (DO-214AA),通常有3个引脚:阴极、阳极和控制引脚。

### 参数特性 - 高电流能力:能够承受高达2.5安培的电流。 - 高浪涌电流能力:具有较高的浪涌电流能力。 - 高可靠性:可靠性高。 - 低反向电流:反向电流低。 - 低正向电压降:正向电压降低。 - 快速开关:以高效率快速开关。 - 无铅/无RoHS:符合无铅和RoHS标准。

### 功能详解 - 该器件主要用于整流,具有低电压降和高效率的特点,适用于需要快速开关和高可靠性的应用。

### 应用信息 - 适用于需要高效率整流的应用,如电源管理、电机控制等。

### 封装信息 - 封装类型:SMB Molded plastic。 - 阻燃等级:UL94V-O。 - 引脚形式:用于表面贴装。 - 极性标识:色带表示阴极端。 - 安装位置:任意。 - 重量:0.1079克。

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