SKT4

SKT4

  • 厂商:

    EIC

  • 封装:

  • 描述:

    SKT4 - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
SKT4 数据手册
SKT2 - SKTB PRV : 20 - 100 Volts IO : 2.5 Amperes FEATURES : * * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forward voltage drop Pb / RoHS Free SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS SMB (DO-214AA) 1.1 ± 0.3 5.4 ± 0.15 4.8 ± 0.15 2.0 ± 0.1 3.6 ± 0.15 2.3 ± 0.2 0.22 ± 0.07 Dimensions in millimeter MECHANICAL DATA : * Case : SMB Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Lead Formed for Surface Mount * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.093 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current (See Fig.1) Maximum Peak Forward Surge Current, 8.3ms single half sine wave superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 2.5 A. (Note 1) Maximum Reverse Current at Rated DC Blocking Voltage (Note 1) Junction Temperature Range Storage Temperature Range SYMBOL SKT2 SKT3 SKT4 SKT5 SKT6 SKT7 SKT8 SKT9 SKTB UNIT VRRM VRMS VDC IF(AV) IFSM 75 20 14 20 30 21 30 40 28 40 50 35 50 60 42 60 2.5 70 49 70 80 56 80 90 63 90 100 70 100 V V V A A VF IR TJ TSTG 0.5 0.74 0.5 0.79 V mA - 65 to + 150 °C °C - 65 to + 125 - 65 to + 150 Notes : (1) Pulse Test : Pulse Width = 300 µs, Duty Cycle = 2%. Page 1 of 2 Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( SKT2 - SKTB ) FIG.1 - FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT, AMPERES 2.5 SKT5 THRU SKTB FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 75 2.0 SKT2 SKT3 SKT4 PEAK FORWARD SURGE CURRENT, AMPERES 150 175 60 1.5 45 1.0 30 0.5 15 0 0 25 50 75 100 125 0 1 2 4 6 10 20 40 60 100 LEAD TEMPERATURE, (°C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS 20 FIG.4 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MILLIAMPERES 10 TJ= 100 °C FORWARD CURRENT, AMPERES 10 SKT2 SKT3 SKT4 SKT8 SKT9 SKTB 1.0 1.0 SKT5 SKT6 SKT7 0.1 TJ = 25 °C TJ = 25 °C PULSE WIDTH = 300µ s DUTY CYCLE = 2% 0.1 0.1 0.01 0 20 40 60 80 100 120 140 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 PERCENT OF RATED REVERSE VOLTAGE, (%) FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 25, 2005
SKT4
1. 物料型号: - 型号包括SKT2至SKTB。

2. 器件简介: - 表面贴装肖特基势垒整流器,具有高电流能力、高浪涌电流能力、高可靠性、高效率、低功耗、低成本和低正向电压降等特点。

3. 引脚分配: - 采用SMB(DO-214AA)封装,极性由色带表示阴极端,引脚形成适用于表面贴装。

4. 参数特性: - 工作电压范围20至100伏特,最大RMS电压14至70伏特,最大直流阻断电压20至100伏特,最大平均正向电流(见图1)为2.5安培,最大正向浪涌电流为75安培(8.3ms单半正弦波叠加在额定负载上,JEDEC方法),最大正向电压在2.5A时为0.5至0.79伏特,最大反向电流在额定直流阻断电压下为0.5毫安。

5. 功能详解: - 器件为单相、半波、60Hz、电阻性或电感性负载设计。对于电容器负载,电流需降低20%。器件无铅/无RoHS,采用UL94V-0级阻燃环氧树脂,重量为0.093克。

6. 应用信息: - 适用于需要高效率、低功耗和高可靠性的整流应用。

7. 封装信息: - 使用SMB塑封外壳,适合任何安装位置,存储温度范围为-65至+150摄氏度。

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