SME1B

TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 SME1A -SME1M PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * * * Glass passivated junction chip High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb Free / RoHS Compliant SURFACE MOUNT HIGH EFFICIENT RECTIFIERS SOD-123FL 2.5(0.098) 2.9(0.114) 1.55(0.061) 1.95(0.077) 0.6(0.024) 1.0(0.039) MECHANICAL DATA : * Case: JEDEC SOD-123FL, molded plastic over passivated chip * Terminals: Solder Plated, solderable per MIL-STD-750, Method 2026 * Polarity: Color band denotes cathode end * Mounting position : Any * Weight: 0.02 gram (Approximate) 0.5(0.020) 1.1(0.043) max0.1(0.004) 3.5(0.138) 3.9(0.154) 0.8(0.031) 1.2(0.047) Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Marking Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Ta = 55 °C Maximum Peak Forward Surge Current, 8.3ms Single half sine wave superimposed on rated load (JEDEC Method) Maximum Forward Voltage at I F = 1.0 A Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL SME1A SME1B SME1D SME1E SME1G SME1J SME1K SME1M UNIT EA VRRM VRMS VDC IF(AV) IFSM VF IR IR(H) Trr CJ TJ TSTG 50 50 - 65 to + 150 - 65 to + 150 1.1 5.0 50 75 50 35 50 EB 100 70 100 ED 200 140 200 EE 300 210 300 1.0 30 EG 400 280 400 EJ 600 420 600 EK 800 560 800 EM 1000 700 1000 V V V A A 1.7 0.05(0.002) 0.25(0.010) 2.2 V µA µA ns pF °C °C Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Junction Temperature Range Storage Temperature Range Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Page 1 of 2 Rev. 01 : January 12, 2009 TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( SME1A - SME1M ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.5 A D.U.T. 50 Vdc (approx) 1Ω PULSE GENERATOR ( NOTE 2 ) OSCILLOSCOPE ( NOTE 1 ) 0 - 0.25 A Trr + - 1.0 A SET TIME BASE FOR 25-35 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 cm FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 1.0 30 FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 0.8 24 8.3 ms SINGLE HALF SINE WAVE Ta = 50 °C 0.6 18 0.4 12 0.2 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175 6 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.4 - TYPICAL FORWARD CHARACTERISTICS FIG.5 - TYPICAL REVERSE CHARACTERISTICS 100 10 TJ = 100 °C FORWARD CURRENT, AMPERES 10 SME1A-SME1G REVERSE CURRENT, MICROAMPERES SME1J-SEM1K 1.0 1.0 SME1M 0.1 TJ = 25 °C 0.1 TJ = 25 °C Pulse Width = 300 μs 2% Duty Cycle 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 3.3 0.01 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 01 : January 12, 2009