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SMR1D

SMR1D

  • 厂商:

    EIC

  • 封装:

  • 描述:

    SMR1D - GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
SMR1D 数据手册
TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 SMR1A - SMR1M PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * * Glass passivated junction chip High current capability High reliability Low reverse current Low forward voltage drop Pb Free / RoHS Compliant GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER SOD-123FL 2.5(0.098) 2.9(0.114) 1.55(0.061) 1.95(0.077) 0.6(0.024) 1.0(0.039) 0.05(0.002) 0.25(0.010) 0.5(0.020) 1.1(0.043) max0.1(0.004) 3.5(0.138) 3.9(0.154) MECHANICAL DATA : * Case: JEDEC SOD-123FL, molded plastic over passivated chip * Terminals: Solder Plated, solderable per MIL-STD-750, Method 2026 * Polarity: Color band denotes cathode end * Mounting position : Any * Weight: 0.02 gram (Approximate) 0.8(0.031) 1.2(0.047) Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Marking Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Ta = 55 °C Peak Forward Surge Current, 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at I F = 1.0 A Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL SMR1A SMR1B SMR1D SMR1G SMR1J SMR1K SMR1M RA RB RD RG RJ RK RM UNIT VRRM VRMS VDC IF(AV) IFSM VF IR IR(H) Trr CJ TJ TSTG 50 35 50 100 70 100 200 140 200 400 280 400 1.0 35 1.3 5 50 600 420 600 800 560 800 1000 700 1000 V V V A A V µA µA Maximum Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Junction Temperature Range Storage Temperature Range Notes : 150 50 250 - 65 to + 150 - 65 to + 150 500 ns pF °C °C ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Page 1 of 2 Rev. 01 : January 12, 2009 TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( SMR1A - SMR1M ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.5 D.U.T. 50 Vdc (approx.) 1Ω PULSE GENERATOR ( NOTE 2 ) OSCILLOSCOPE ( NOTE 1 ) 0 - 0.25 Trr + - 1.0 A SET TIME BASE FOR 50-100 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 cm FIG.2 - DERATING CURVE CURRENT AVERAGE FORWARD CURRENT, (A) 1.0 35 FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 0.8 PEAK FORWARD SURGE CURRENT, (A) 28 0.6 21 0.4 14 0.2 60Hz RESISTIVE OR INDUCTIVE 0 0 25 50 75 100 125 150 175 7 Ta = 50 °C 8.3 ms SINGLE HALF SINE WAVE 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 10 NUMBER OF CYCLES AT 60Hz FIG.5 - TYPICAL REVERSE CHARACTERISTICS TJ = 100 °C FORWARD CURRENT, (A) TJ = 25 °C 10 REVERSE CURRENT, (µA) 1.0 1.0 0.1 TJ = 25 °C 0.1 Pulse Width = 300 μs 2% Duty Cycle 0.0 10 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 2.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, (V) Page 2 of 2 Rev. 01 : January 12, 2009
SMR1D 价格&库存

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