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SR1D

SR1D

  • 厂商:

    EIC

  • 封装:

  • 描述:

    SR1D - SURFACE MOUNT FAST RECOVERY RECTIFIERS - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
SR1D 数据手册
S R1A - SR1M PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency SURFACE MOUNT FAST RECOVERY RECTIFIERS SMA (DO-214AC) 1.1 ± 0.3 5.0 ± 0.15 4.5 ± 0.15 1.2 ± 0.2 2.6 ± 0.15 2.1 ± 0.2 0.2 ± 0.07 * Pb / RoHS Free 2.0 ± 0.2 MECHANICAL DATA : * * * * * * Case : SMA Molded plastic Epoxy : UL94V-O rate flame retardant Lead : Lead Formed for Surface Mount Polarity : Color band denotes cathode end Mounting position : Any Weight : 0.067 gram Dimensions in millimeter Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Ta = 55 °C Peak Forward Surge Current, 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at I F = 1 .0 A Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL SR1A SR1B SR1D SR1G SR1J SR1K SR1M UNIT V RRM V RMS V DC I F(AV) IFSM VF IR IR(H) Trr 50 35 50 100 70 100 200 140 200 400 280 400 1.0 35 1.3 5 50 600 420 600 800 560 800 1000 700 1000 V V V A A V µA µA Maximum Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Junction Temperature Range Storage Temperature Range Notes : 150 50 250 - 65 to + 150 - 65 to + 150 500 ns pf °C °C CJ TJ T STG ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Page 1 of 2 Rev. 02 : March 24, 2005 R ATING AND CHARACTERISTIC CURVES ( SR1A - SR1M ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.5 D.U.T. 50 Vdc (approx.) 1Ω PULSE GENERATOR ( NOTE 2 ) O SCILLOSCOPE ( NOTE 1 ) 0 - 0.25 Trr + - 1 .0 A SET TIME BASE FOR 50-100 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 1.0 35 FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 8.3 ms SINGLE HALF SINE W A V E Ta = 50 ° C AVERAGE FORWARD OUTPUT CURRENT, AMPERES 0 .8 28 0.6 21 0.4 14 0.2 6 0Hz RESISTIVE OR INDUCTIVE 0 0 25 50 75 100 125 150 175 7 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( ° C) FIG.4 - TYPICAL FORWARD CHARACTERISTICS REVERSE CURRENT, MICROAMPERES 10 NUMBER OF CYCLES AT 60Hz FIG.5 - TYPICAL REVERSE CHARACTERISTICS 100 FORWARD CURRENT, AMPERES Pulse W idth = 300 µ s 2% Duty Cycle TJ = 2 5 ° C 10 TJ = 1 00 ° C 1.0 1.0 0.1 TJ = 2 5 ° C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE, VOLTS P age 2 of 2 R ev. 02 : March 24, 2005

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