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UF1002

UF1002

  • 厂商:

    EIC

  • 封装:

  • 描述:

    UF1002 - ULTRA FAST RECTIFIER DIODE - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
UF1002 数据手册
RM2 - RM2Z PRV : 200 - 1000 Volts Io : 1.2 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free SILICON RECTIFIER DIODES D2A 0.161 (4.1) 0.154 (3.9) 1.00 (25.4) MIN. 0.284 (7.2) 0.268 (6.8) MECHANICAL DATA : * Case : D2A Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.645 gram 0.040 (1.02) 0.0385 (0.98) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 70 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.5 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF RM2Z 200 140 200 RM2 400 280 400 RM2A 600 420 600 1.2 RM2B 800 560 800 RM2C 1000 700 1000 UNIT V V V A IFSM VF IR IR(H) CJ RθJA TJ TSTG 100 0.91 10 50 30 50 - 65 to + 175 - 65 to + 175 A V µA µA pF °C/W °C °C Typical Junction Capacitance (Note1) Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. Page 1 of 2 Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( RM2 - RM2Z ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 1.5 100 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 8.3 ms SINGLE HALF SINE WAVE 80 AVERAGE FORWARD OUTPUT CURRENT, AMPERES 1.2 0.9 60 0.6 40 0.3 60 Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175 20 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES 10 TJ = 100 °C FORWARD CURRENT, AMPERES 10 1.0 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 120 140 1.0 Pulse W idth = 300 µs 2% Duty Cycle 0.1 TJ = 25 °C PERCENT OF RATED REVERSE VOLTAGE, (%) 1.3 1.4 0.01 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 25, 2005
UF1002
1. 物料型号: - RM2Z、RM2、RM2A、RM2B、RM2C

2. 器件简介: - 这些型号均为硅整流二极管,具有高电流能力、高浪涌电流能力、高可靠性、低反向电流、低正向电压降,且无铅/无RoHS。

3. 引脚分配: - 文档中提到引脚为轴向引脚,可焊接,符合MIL-STD-202标准,方法208保证。

4. 参数特性: - 最大重复峰值反向电压(VRRM):200-1000伏不等。 - 最大RMS电压(VRMS):140-700伏不等。 - 最大直流阻断电压(VDC):200-1000伏不等。 - 最大平均正向电流(IF):1.2安培。 - 正向浪涌电流(IFSM):100安培。 - 最大正向电压(VF):0.91伏。 - 最大直流反向电流(IR):10-50微安。 - 典型结电容(CJ):30皮法。 - 典型热阻(ROJA):50°C/W。 - 结温范围(TJ):-65至+175°C。 - 储存温度范围(TSTG):-65至+175°C。

5. 功能详解: - 这些二极管适用于整流应用,具有高电流和高浪涌电流的能力,同时保持低反向电流和低正向电压降,适合在各种电力电子和信号处理应用中使用。

6. 应用信息: - 适用于需要高可靠性和高电流处理能力的应用,如电源整流、电机控制和信号整流。

7. 封装信息: - 封装类型为D2A模塑塑料,环氧树脂为UL94V-0级阻燃,轴向引脚,带有色环表示阴极端,可任意位置安装,重量为0.645克。
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