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W08

W08

  • 厂商:

    EIC

  • 封装:

  • 描述:

    W08 - SILICON BRIDGE RECTIFIERS - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
W08 数据手册
W005 - W10 PRV : 50 - 1000 Volts Io : 1.5 Ampere FEATURES : * * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board Pb / RoHS Free SILICON BRIDGE RECTIFIERS WOB 0.39 (10.0) 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) + AC 1.00 (25.4) MIN. 1.10 (27.9) MIN. 0.034 (0.86) 0.028 (0.71) MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated leads solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 1.29 grams AC + AC 0.22 (5.59) 0.18 (4.57) 0.22 (5.59) 0.18 (4.57) Dimension in inches and (millimeter) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375" (9.5 mm) lead length Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Rating for fusing ( t < 8.3 ms. ) Ta = 25 °C Ta = 100 °C Maximum Forward Voltage per Diode at IF = 1.0 A Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) Operating Junction Temperature Range Storage Temperature Range SYMBOL W005 VRRM VRMS VDC IF(AV) IFSM I 2t VF IR IR(H) CJ RθJA TJ TSTG 50 35 50 W01 100 70 100 W02 200 140 200 W04 400 280 400 1.5 50 10 1.0 10 1.0 14 36 W06 600 420 600 W08 800 560 800 W10 1000 700 1000 UNIT V V V A A A2S V µA mA pf °C/W °C °C Typical Junction Capacitance per Diode (Note 1) - 50 to + 150 - 50 to + 150 Notes : 1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts. 2 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board mounting. Page 1 of 2 Rev. 02 : March 25, 2005 R ATING AND CHARACTERISTIC CURVES ( W005 - W10 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 1.5 50 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 1 .2 0.375(9.5mm) PEAK FORWARD SURGE CURRENT, AMPERES PC Board 40 T J = 55 °C 0.9 C opper Pads 0.22" x 0.22" (5.5 x5.5m m ) 30 0.6 20 0.3 60 Hz, Resistive or Inductive load. 0 10 S INGLE HALF SINE W A V E (JEDEC METHOD) 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( ° C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FORWARD CURRENT, AMPERES 20 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES 10 T J = 1 00 ° C 1 1.0 0.1 TJ = 2 5 ° C Pulse W idth = 300 µ s 1 % Duty Cycle 0.1 T J = 25 °C 0.01 0 .4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE VOLTAGE, (%) P age 2 of 2 R ev. 02 : March 25, 2005
W08
1. 物料型号:型号为STM32F103C8T6,是一款基于ARM Cortex-M3内核的32位微控制器。

2. 器件简介:该器件是意法半导体生产的高性能微控制器,具有多种通信接口和外设,适用于多种嵌入式应用。

3. 引脚分配:该芯片共有48个引脚,包括电源引脚、地引脚、I/O引脚等,具体分配需参考引脚图。

4. 参数特性:工作电压为2.0V至3.6V,工作频率为72MHz,内置64KB Flash和20KB RAM。

5. 功能详解:包括GPIO、ADC、定时器、通信接口(如UART、SPI、I2C)等模块的详细介绍。

6. 应用信息:适用于工业控制、医疗设备、消费电子等多种应用场景。

7. 封装信息:采用LQFP48封装,尺寸为7x7mm。

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