ELM13402CA

15 10V 3V 12 4.5V 10 8 Vds=5V Id (A) 2.5V 6 Id(A) 4 125°C 2 25°C 0 4 5 0 9 6 3 Vgs=2V 0 0 1 2 3 Vds (Volts) Fig 1: On-Region Characteristics 150 125 Vgs=2.5V 0.5 1 1.5 2 2.5 3 3.5 Vgs(Volts) Figure 2: Transfer Characteristics 1.8 Normalized On-Resistance 1.6 1.4 1.2 1 0.8 Vgs=4.5V Vgs=10V Rds(on) (m: ) 100 75 Vgs=4.5V 50 25 0 0 2 4 6 8 10 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Vgs=10V Vgs=2.5V 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 200 1.0E+01 1.0E+00 150 Id=2A 1.0E-01 125°C Rds(on) (m: ) 100 125°C Is (A) 1.0E-02 1.0E-03 25°C 1.0E-04 50 25°C 1.0E-05 0 0 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Vsd (Volts) Figure 6: Body-Diode Characteristics 5 Vds=15V Id=4A 4 600 500 Capacitance (pF) Ciss 400 300 200 100 0 Coss Crss Vgs (Volts) 3 2 1 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 10 15 20 25 30 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Tj(max)=150°C Ta=25°C 20 Tj(max)=150°C Ta=25°C 100Ps 1ms 0.1s 10ms 10Ps 15 Id (Amps) 10.0 Power (W) 100 Rds(on) limited 10 1.0 1s 10s DC 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance