ELM13406CA

15 10V 12 6V 4V 4.5V 10 8 Vds=5V Id (A) 3.5V 6 Vgs=3V Id(A) 4 125°C 2 9 6 3 25°C 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 100 90 0 1.5 2 2.5 3 3.5 4 4.5 5 Vgs(Volts) Figure 2: Transfer Characteristics 1.8 Normalized On-Resistance Id=3.6A 1.6 1.4 1.2 1 0.8 Vgs=4.5V Vgs=10V Rds(on) (m: ) 80 70 60 50 40 0 2 4 6 Vgs=4.5V Vgs=10V 8 10 0 25 50 75 100 125 150 175 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 200 Id=3.6A 150 1.0E+01 1.0E+00 1.0E-01 125° Rds(on) (m: ) Is (A) 100 125°C 1.0E-02 25° 1.0E-03 50 25°C 1.0E-04 0 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Vsd (Volts) Figure 6: Body-Diode Characteristics 10 Vds=15V Id=3.6A 8 400 Ciss 6 Capacitance (pF) 300 Vgs (Volts) 200 Coss Crss 100 4 2 0 0 1 2 3 4 5 6 7 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Tj(max)=150°C Ta=25°C 10.0 Rds(on) limited 10Ps 20 Tj(max)=150°C Ta=25°C 15 100Ps 1ms 0.1s 10ms Id (Amps) Power (W) 100 10 1.0 1s 10s DC 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance