ELM13407CA

20 -10V 15 -5V -4.5V -4V 10 Vds=-5V 8 -Id (A) 10 -3.5V 5 -Id (A) 6 4 125°C Vgs=-3V 2 25°C 0 0.00 0 1.00 2.00 3.00 4.00 5.00 0 1 2 3 4 -Vds (Volts) Figure 1: On-Region Characteristics -Vgs (Volts) Figure 2: Transfer Characteristics 1.6 100 80 Normalized On-Resistance Vgs=-4.5V 1.4 Vgs=-10V Rds(on) (m: ) Vgs=-4.5V 60 Vgs=-10V 40 1.2 1 Id=-2A 20 0 2 4 6 8 10 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 160 140 120 Id=-2A 1E+01 1E+00 1E-01 125°C Rds(on) (m: ) -Is (A) 100 80 60 40 20 2 4 6 8 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 125°C 1E-02 1E-03 1E-04 1E-05 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -Vsd (Volts) Figure 6: Body-Diode Characteristics 25°C 10 8 Vds=-15V Id=-4A 1000 800 Ciss 6 Capacitance (pF) -Vgs (Volts) 600 4 2 0 0 4 8 12 16 -Qg (nC) Figure 7: Gate-Charge Characteristics 400 Coss Crss 200 0 0 5 10 15 20 25 30 -Vds (Volts) Figure 8: Capacitance Characteristics 100 Tj(max)=150°C Ta=25°C Rds(on) limited 0.1s 100Ps 10Ps 1ms 10ms 40 Tj(max)=150°C Ta=25°C 30 -Id (Amps) Power (W) 10 20 1 1s 10s DC 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance