ELM13409CA

20 -8V -10V 15 -6V -5.5V -5V Vgs=-4.5V 5 -4V -3.5V -3.0V 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 250 10 Vds=-5V 8 25°C -Id (A) -Id (A) 6 125°C 4 10 2 0 1 2 3 4 5 6 -Vgs (Volts) Figure 2: Transfer Characteristics 370 1.6 Normalized On-Resistance 200 Vgs=-10V 1.4 18 9 Rds(on) (m: ) Vgs=-4.5V 1.2 Id=-2A 1 150 Vgs=-4.5V 100 Vgs=-10V 50 0 1 2 3 4 5 6 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0.8 0 25 50 75 100 125 22 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 300 250 Id=-2A 1.0E+01 1.0E+00 1.0E-01 Rds(on) (m: ) 200 -Is (A) 125°C 150 100 50 0 3 4 5 6 7 8 9 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 1.0E-02 125°C 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -Vsd (Volts) Figure 6: Body-Diode Characteristics 25°C 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 -Qg (nC) Figure 7: Gate-Charge Characteristics Vds=-15V Id=-2.6A 500 400 Capacitance (pF) Ciss 300 -Vgs (Volts) 200 Coss Crss 0 5 10 15 20 25 30 100 0 -Vds (Volts) Figure 8: Capacitance Characteristics 370 100.0 Tj(max)=150°C Ta=25°C Rds(on) limited 0.1s 100Ps 1ms 10ms 20 Tj(max)=150°C 18 Ta=25°C 15 -Id (Amps) Power (W) 10.0 10Ps 9 10 1.0 1s 10s DC 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 5 0 0.001 0.01 0.1 1 10 100 22 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance