ELM13413CA-S

15 -4.5V -3.0V -8V 10 -2.5V 6 Vds=-5V 4 -2.0V -Id (A) -Id (A) 2 5 Vgs=-1.5V 125°C 25°C 0 0 1 2 3 4 -Vds (Volts) Fig 1: On-Region Characteristics 5 0 0 1 1.5 -Vgs (Volts) Figure 2: Transfer Characteristics 0.5 2 200 Vgs=-1.8V 1.8 Vgs=-2.5V Normalized On-Resistance 1.6 Vgs=-1.8V Vgs=-4.5V Rds(on) (m: ) 150 Vgs=-2.5V 100 Vgs=-4.5V 1.4 1.2 1 50 0 2 4 6 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 Id=-4A -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 Rds(on) (m: ) 150 1E-01 125°C 25°C 125°C 100 25°C -Is (A) 8 1E-02 1E-03 1E-04 1E-05 50 0 2 4 6 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -Vsd (Volts) Figure 6: Body-Diode Characteristics -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 5 Vds=-10V Id=-3A 800 4 3 Capacitance (pF) 600 Ciss -Vgs (Volts) 400 2 1 200 Crss Coss 0 0 2 4 6 8 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 -Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Tj(max)=150°C Ta=25°C 100Ps 10Ps 20 Tj(max)=150°C Ta=25°C 15 -Id (Amps) Rds(on) limited 1.0 1s 10s 1ms 0.1s 10ms Power (W) 10.0 10 5 DC 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance 1 D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Pd 0.1 Ton Single Pulse 0.01 0.00001 T 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance