ELM13414CA-S

16 8V 12 4.5V 10 Vds=5V 8 2V Id (A) 8 Id(A) 3V 2.5V 6 4 4 Vgs=1.5V 125°C 2 25°C 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 100 1.8 0 0 0.5 1 1.5 2 2.5 Vgs(Volts) Figure 2: Transfer Characteristics Normalized On-Resistance Vgs=2.5V 1.6 1.4 1.2 1 0.8 Id=4.2A Vgs=1.8V Vgs=4.5V 80 Vgs=1.8V Rds(on) (m: ) 60 Vgs=2.5V 40 Vgs=4.5V 20 0 4 8 12 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 90 80 Id=4.2A 1E+01 1E+00 125°C 1E-01 125°C Rds(on) (m: ) Is (A) 70 60 50 40 30 20 0 2 4 6 8 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 1E-02 25°C 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 5 4 Vds=10V Id=4.2A 800 3 2 Capacitance (pF) 600 Ciss Vgs (Volts) 400 200 Coss 1 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 Crss 10 15 20 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Tj(max)=150°C Ta=25°C 10.0 Rds(on) limited 0.1s 1.0 1s 10s DC 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10ms 100Ps 20 Tj(max)=150°C Ta=25°C 15 Id (Amps) 1ms Power (W) 10Ps 10 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZT Jja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance