10 10V 8 5V 3.5V
8
6
Vds=5V
Id (A)
2.5V 4 Vgs=2V
Id(A)
6
4 125°C 2 25°C
2
0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region characteristics 200
0 1 1.25 1.5 1.75 2 2.25 2.5 Vgs(Volts) Figure 2: Transfer Characteristics 2
Normalized On-Resistance
180
1.8 1.6 1.4 1.2 1 0.8 Vgs=2.5V Vgs=4.5
Rds(on) (m: )
Vgs=2.5V 160 140 120 Vgs=4.5V 100 0 1 2 3 4 5 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
0
25
50
75
100
125
150
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01
360 310 125°C 260 210 160 110 60 10 0 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C Id=2.3A
1E+00 125°C 1E-01
Rds(on) (m: )
Is (A)
1E-02 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Vsd (Volts) Figure 6: Body-Diode Characteristics 25°C
5 4 Vds=27.5V Id=2.1A
400 360 320 Ciss
Capacitance (pF)
280 240 200 160 120 80 40 0 Coss Crss
Vgs (Volts)
3 2 1 0 0 1 2 3 Qg (nC) Figure 7: Gate-Charge Characteristics
0
5
10
15
20
25
30
Vds (Volts) Figure 8: Capacitance Characteristics
100.0 Rds(on) limited Tj(max)=150°C Ta=25°C
15 Tj(max)=150°C Ta=25°C
100Ps 0.1s 1.0 1s 10s DC 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10ms
1ms
Power (W)
Id (Amps)
10.0
10
5
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=TA+Pdm.ZTja.RTja RTja=100°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd Ton T Single Pulse
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
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