ELM14406AA-N

50 10V 40 4.5V 3V 2.5V 30 25 20 Vds=5V Id (A) 30 Id(A) 2V 15 125°C 10 25°C 20 10 Vgs=1.5V 0 0 1 2 3 4 Vds (Volts) Fig 1: On-Region Characteristics 5 5 0 0 0.5 1.5 2 2.5 Vgs(Volts) Figure 2: Transfer Characteristics 1 3 30 25 Vgs=2.5V 20 Vgs=4.5V 15 10 5 0 0 15 20 25 30 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 5 10 Vgs=10V 1.8 Id=10A Vgs=10V Normalized On-Resistance 1.6 Vgs=4.5V Rds(on) (m: ) 1.4 Vgs=2.5V 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 40 Id=10A Vgs=0V 1.0E+00 125°C 1.0E-01 30 Rds(ON) (m: ) 20 Is (A) 125°C 1.0E-02 25°C 1.0E-03 1.0E-04 25°C 10 0 0.00 1.0E-05 2.00 0.0 0.2 0.4 Vsd (Volts) 0.8 0.6 1.0 Figure 6: Body-Diode Characteristics 1.2 4.00 6.00 8.00 10.00 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 5 Vds=15V Id=11.5A 2500 2250 2000 4 Capacitance (pF) 1750 1500 1250 1000 750 500 250 Coss Crss Vgs (Volts) Ciss 3 2 1 0 0 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 4 8 24 0 0 15 20 25 Vds (Volts) Figure 8: Capacitance Characteristics 5 10 30 100.0 Rds(on) limited 10.0 100 Ps 1ms 10ms 0.1s 1s 1.0 Tj(max)=150°C Ta=25°C 0.1 0.1 10 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1 100 10s DC 10Ps 50 40 Tj(max)=150°C Ta=25°C Power (W) Id (Amps) 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=T on/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=40°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse Pd Ton T 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.01 100 1000