60 10V 50 2.5V 40
60 50 40 Vgs=2V Vds=5V
Id (A)
30 20 10 0 0 1 2
Id(A)
30 20 125°C 10 0 25°C
3
4
5
0
0.5
1
1.5
2
2.5
Vds (Volts) Fig 1: On-Region Characteristics 6.0 1.6
Vgs(Volts) Figure 2: Transfer Characteristics
Normalized On-Resistance
5.5
Vgs=4.5V
Id=18A 1.4
Vgs=4.5V
Rds(on) (m: )
Vgs=10V 1.2
5.0 Vgs=10V 4.5
1
4.0 0 10 20 30 40 50 60 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
16
1.0E+02 1.0E+01
12 Id=18A
1.0E+00 125°C 125°C
Rds(ON) (m: )
8
Is (A)
1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 25°C
4
25°C
UNCTIONS AND RELIABILITY WITHOUT NOTICE.
0 0 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
Vsd (Volts) Figure 6: Body-Diode Characteristics
5 4 Vds=15V Id=18A
100000
Ciss
Capacitance (pF)
Vgs (Volts)
10000
3 2 1
1000 Crss
Coss
0 0 10 20 30 40 50 60 70 80 90 Qg (nC) Figure 7: Gate-Charge Characteristics
100 0 5 10 15 20 25 30 Vds (Volts) Figure 8: Capacitance Characteristics
100.0 Rds(on) limited 10ms 10.0 0.1s 1s 10s 1.0 Tj(max)=150°C Ta=25°C 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 100Ps 1ms 10Ps
100 80 Tj(max)=150°C Ta=25°C
Power (W)
Id (Amps)
60 40 20 0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZT ja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=40°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd Ton
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Single Pulse 0.001 0.01 0.00001 0.0001 0.01 0.1 1
T 10 100 1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
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