50 -10V -6V -5V
30 Vds=-5V 25 20
40
-Id (A)
-Id(A)
30
-4.5V
15 10
125°C
20 Vgs=-4V 25°C 5 0 0 1 2 3 4 5 2 2.5 3 3.5 4 4.5 5 -Vds (Volts) Fig 1: On-Region Characteristics 12 1.6 -Vgs(Volts) Figure 2: Transfer Characteristics
10
0
10
Normalized On-Resistance
Vgs=-6V
Vgs=-10V Id = -15A 1.4 Vgs=-20V Id = -15A 1.2 Vgs=-6V Id = -10A
Rds(on) (m: )
8
Vgs=-10V
6 Vgs=-20V 4 0 5 10 15 20 25 30 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
1
0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
16 Id=-15A 14
-15 1.0E+01 -12.8
1.0E+00 1.0E-01
Rds(on) (m: )
12
125°C
-Is (A)
125°C 10 8 25°C 6 4 4 8 12 16 20 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-02 1.0E-03 1.0E-04 25°C 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics
10 Vds=-15V Id=-15A 8
7000 6000 Ciss
6
Capacitance (pF)
5000 4000 3000 Coss 2000 1000
-Vgs (Volts)
4
2 Crss 0 0 10 40 50 60 70 80 -Qg (nC) Figure 7: Gate-Charge Characteristics 20 30 90 0 15 20 25 -Vds (Volts) Figure 8: Capacitance Characteristics 5 10 30
0
100.0 Rds(on) limited 100Ps 1ms 10Ps
40 Tj(max)=150°C Ta=25°C 30
-Id (Amps)
Power (W)
10.0
10ms 0.1s
20
1.0
1s 10s Tj(max)=150°C Ta=25°C DC 0 0.001 10
0.1 0.1 1 10 100 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=40°C/W 1
0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
0.01
-15
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
-12.8
ZTja Normalized Transient Thermal Resistance
Pd Ton Single Pulse T
0.1
0.01 0.00001
0.0001
0.001 0.01 1 10 Pulse 0.1 Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
很抱歉,暂时无法提供与“ELM14423AA-N”相匹配的价格&库存,您可以联系我们找货
免费人工找货