ELM14425AA-N

30 25 20 -20V -10V -5V -4V -3.5V 30 Vds=-5V 25 20 -Id (A) 15 10 5 -Id (A) -4.5V 15 10 5 0 2 2.5 125°C 25°C Vgs=-3V 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 3 3.5 4 4.5 5 -Vgs(Volts) Figure 2: Transfer Characteristics 1.6 10 9 Vgs=-10V Normalized On-Resistance Rds(on) (m: ) 1.4 Vgs=-10V Id = -14A 8 Vgs=-20V 1.2 Vgs=-20V Id = -14A 7 1 6 0 5 10 15 20 25 30 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 20 Id=-14A -15 1.0E+01 -12.8 1.0E+00 1.0E-01 125°C Rds(on) (m: ) 15 -Is (A) 125°C 1.0E-02 1.0E-03 1.0E-04 10 25°C 25°C 1.0E-05 5 4 8 12 16 20 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics 10 Vds=-15V Id=-14A 5000 8 4000 Ciss 6 Capacitance (pF) -Vgs (Volts) 3000 4 2000 Coss Crss 0 2 1000 0 0 10 30 40 50 60 -Qg (nC) Figure 7: Gate-Charge Characteristics 20 70 0 20 30 -Vds (Volts) Figure 8: Capacitance Characteristics 10 40 100.0 Rds(on) limited 10Ps 100Ps 1ms 10ms 0.1s 1s Tj(max)=150°C Ta=25°C 10s DC 40 Tj(max)=150°C Ta=25°C 30 -Id (Amps) 10.0 Power (W) 20 1.0 10 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=40°C/W 1 10 100 0 0.001 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 0.01 -15 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse -12.8 ZTja Normalized Transient Thermal Resistance Pd Ton Single Pulse T 0.1 0.01 0.00001 0.0001 0.001 0.01 1 10 Pulse 0.1 Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000