ELM14429AA-N

60 -10V 50 40 -4.5V -3.5V -4V 60 50 40 Vds=-5V -Id (A) 30 20 10 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics Vgs=-3V -Id(A) 30 20 125°C 10 25°C 0 1 1.5 2 2.5 3 3.5 4 -Vgs(Volts) Figure 2: Transfer Characteristics 1.6 10 Rds(on) (m: ) 8 Vgs=-4.5V Normalized On-Resistance Id=-15A 1.4 Vgs=-10V 6 Vgs=-10V 4 1.2 Vgs=-4.5V 1 2 0 5 10 15 20 25 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 20 Id=-15A 16 1.0E+01 1.0E+00 1.0E-01 125°C Vgs=0V Rds(on) (m: ) 12 8 25°C 4 0 2 4 6 -Is (A) 125°C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 25°C 0.6 0.8 1.0 8 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage -Vsd (Volts) Figure 6: Body-Diode Characteristics 10 Vds=-15V Id=-15A 8 8000 7000 Ciss Capacitance (pF) 6000 5000 4000 3000 2000 1000 Crss Coss -Vgs (Volts) 6 4 2 0 0 20 40 60 80 100 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 Rds(on) limited 10.0 100Ps 1ms 10Ps 0 0 15 20 25 -Vds (Volts) Figure 8: Capacitance Characteristics 5 10 30 100 80 Tj(max)=150°C Ta=25°C -Id (Amps) Power (W) 10ms 0.1s 1s Tj(max)=150°C Ta=25°C 10s DC 60 40 20 0 0.001 1.0 0.1 0.1 1 10 100 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 0.01 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=40°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd Ton T Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 1000 0.01 0.00001 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance