30 10V 4V 4.5V 6V 20
30 25 20 Vds=5V 125°C
Id (A)
Id(A)
10 Vgs=3.5V
15 10 25°C 5
0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics
0 1.5 2 2.5 3 3.5 4 Vgs(Volts) Figure 2: Transfer Characteristics 2.2 Vgs=4.5V
22
Normalized On-Resistance
2 1.8 1.6 1.4 1.2 1 0.8
20
Vgs=10V Id=8.2A
Rds(on) (m: )
18 Vgs=10V 16
Vgs=4.5V Id=7.6A
14 0 5 10 15 20 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
0
25
50
75
100
125
150
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
50 Id=8.2A 40 125°C
1.0E+01 1.0E+00 125°C 1.0E-01
Rds(on) (m: )
Is (A)
30 25°C 20
1.0E-02 25°C 1.0E-03 1.0E-04
10 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics
10 8 Vds=30V Id=8.2A
3500 3000
Capacitance (pF)
2500 2000 1500 Coss 1000 Crss 500
Ciss
Vgs (Volts)
6 4 2 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics
0 0 5 10 15 20 25 30 Vds (Volts) Figure 8: Capacitance Characteristics
100.0 Rds(on) limited 10.0 1s 0.1s 1.0 Tj(max)=150°C Ta=25°C 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s DC 10Ps
40 100Ps 1ms 10ms Tj(max)=150°C Ta=25°C 30
Power (W)
Id (Amps)
20
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=40°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
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