ELM14444AA-N

60 50 60 10V 50 Vds=5V 4.0V 40 40 Id (A) Id(A) 30 3.5V 20 10 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics Vgs=3V 30 20 10 0 1.5 2 2.5 125°C 25°C 3 3.5 4 4.5 Vgs(Volts) Figure 2: Transfer Characteristics 8 Vgs=4.5V 1.6 Normalized On-Resistance 7 Id=20A 1.4 Vgs=4.5V 1.2 Vgs=10V 1 Rds(on) (m: ) 6 5 4 3 2 0 10 20 30 40 50 60 Vgs=10V 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 9 1.0E+02 1.0E+01 125°C 7.5 125°C 1.0E+00 Rds(on) (m: ) Is (A) 1.0E-01 25°C 1.0E-02 1.0E-03 6 Id=20A 4.5 25°C 3 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Vsd (Volts) Figure 6: Body-Diode Characteristics 10 8 Vds=15V Id=20A 5000 4000 6 4 2 0 0 10 20 30 40 50 60 70 Qg (nC) Figure 7: Gate-Charge Characteristics Capacitance (pF) Ciss 3000 Vgs (Volts) 2000 Coss 1000 Crss 0 0 15 20 25 Vds (Volts) Figure 8: Capacitance Characteristics 5 10 30 100.0 Rds(on) limited 10ms 10.0 100 Ps 1ms 10Ps 100 80 Tj(max)=150°C Ta=25°C Power (W) Id (Amps) 0.1s 1s 10s 60 40 20 0 0.001 1.0 Tj(max)=150°C Ta=25°C 0.1 0.1 1 DC 10 Vds (Volts) 100 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 10 ZTja Normalized Transient Thermal Resistance D=T on/T Tj,pk=T a+Pdm.ZTja.RTja RTja=40°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance