ELM14450AA-N

30 10V 25 20 5.0V 4.5V 20 Vds=5V 15 Id (A) 4.0V 15 10 Vgs=3.5V 5 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 5 25°C Id(A) 10 125°C 0 2 2.5 3 3.5 4 4.5 Vgs(Volts) Figure 2: Transfer Characteristics 2 40 35 Normalized On-Resistance Vgs =4.5V 1.8 1.6 1.4 1.2 1 0.8 Rds(on) (m: ) 30 25 20 Vgs=10V 15 10 0 5 10 15 20 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Vgs=10V Id=6.6A Vgs=4.5V Id=5.5A 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 80 Id=6.6A 60 1.0E+01 1.0E+00 1.0E-01 125°C Rds(on) (m: ) 125°C 40 Is (A) 1.0E-02 1.0E-03 25°C 20 25°C 1.0E-04 1.0E-05 0 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 10 Vds=40V Id= 6.6A 800 8 Capacitance (pF) 600 Ciss 400 Coss Crss 200 Vgs (Volts) 6 4 2 0 0 Qg (nC) Figure 7: Gate-Charge Characteristics 2 4 6 8 10 0 20 30 Vds (Volts) Figure 8: Capacitance Characteristics 10 40 0 100.0 Rds(on) limited 10.0 10ms 1ms 1s 1.0 Tj(max)=150°C Ta=25°C 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s DC 0.1s 100Ps 10Ps 40 Tj(max)=150°C Ta=25°C 30 Id (Amps) Power (W) 20 10 0 0.001 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 0.01 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance