ELM14607AA-N

30 10V 25 20 6V 5V 4.5V 20 16 12 8 125°C 4 25°C 0 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Vds (Volts) Fig 1: On-Region Characteristics Vgs (Volts) Figure 2: Transfer Characteristics Vds=5V 4V Id (A) 15 3.5V 10 5 0 Vgs=3V 60 Id (A) 1.7 Normalized On-Resistance 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0 50 Id=6.9 Vgs=10V Rds(on) (m: ) 40 30 20 Vgs=4.5V Vgs=4.5V Vgs=10V 10 0 5 10 15 20 Id (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature 70 60 1.0E+01 Id=6.9 Is Amps 1.0E+00 125°C Rds(on) (m: ) 50 40 30 20 10 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 125°C 1.0E-01 25°C 1.0E-02 FET + Schottky 1.0E-03 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body diode with parallel Schottky characteristics (Note F) 10 8 1000 Vds=15V Id=6.9A 900 800 f=1MHz Vgs=0V Capacitance (pF) 700 600 500 400 300 200 100 Crss 0 5 10 15 20 25 30 Coss (FET + Schottky) Ciss Vgs (Volts) 6 4 2 0 0 2 4 6 8 10 12 14 Qg (nC) Figure 7: Gate-Charge characteristics 0 Vds (Volts) Figure 8: Capacitance Characteristics: MOSFET + Parallel Schottky 100 Rds(on) limited Tj(max.)=150°C Ta=25°C 1ms 10ms 0.1s 100Ps 10Ps 40 Tj(max.)=150°C Ta=25°C 30 Id (Amps) 10 Power W 1s 10s DC 20 1 10 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd Ton Single Pulse T 100 1000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 30 -10V 25 20 -6V -5V -4.5V 30 Vds=-5V 25 20 -4V -Id (A) -Id (A) -3.5V 15 10 5 Vgs=-3V 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -Vgs (Volts) Figure 2: Transfer Characteristics 1.60 Id=-6A 125°C 25°C 60 Vgs=-4.5V 50 Normalized On-Resistance 55 Rds(on) (m: ) 45 40 35 30 25 20 15 10 0 5 10 15 20 25 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 90 80 Id=-6A Vgs=-10V 1.40 Vgs=-10V 1.20 Vgs=-4.5V 1.00 0.80 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 125°C Rds(on) (m: ) -Is (A) 125°C 70 60 50 1.0E-02 1.0E-03 1.0E-04 40 25°C 30 1.0E-06 20 3 6 7 8 9 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4 5 0.0 0.2 0.4 1.0E-05 25°C 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics 10 Vds=-15V Id=-6A 8 1500 1250 Ciss Capacitance (pF) -Vgs (Volts) 1000 750 500 Coss 250 0 Crss 6 4 2 0 0 4 8 12 16 20 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 10 15 20 25 30 -Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Tj(max.)=150°C, Ta=25°C Rds(on) limited 0.1s 1.0 10Ps 100Ps 1ms 10ms 1s 10s 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 40 Tj(max.)=150°C Ta=25°C 30 -Id (Amps) Power (W) 10.0 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Pd 0.1 Ton Single Pulse 0.01 0.00001 T 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000