30 10V 25 20 6V 5V 4.5V
20 16 12 8 125°C 4 25°C 0 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Vds (Volts) Fig 1: On-Region Characteristics Vgs (Volts) Figure 2: Transfer Characteristics Vds=5V
4V
Id (A)
15 3.5V 10 5 0 Vgs=3V
60
Id (A)
1.7
Normalized On-Resistance
1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0
50
Id=6.9
Vgs=10V
Rds(on) (m: )
40 30 20
Vgs=4.5V
Vgs=4.5V
Vgs=10V 10 0 5 10 15 20 Id (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
50
100
150
200
Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature
70 60
1.0E+01
Id=6.9
Is Amps
1.0E+00
125°C
Rds(on) (m: )
50 40 30 20 10 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 125°C
1.0E-01 25°C 1.0E-02 FET + Schottky 1.0E-03 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body diode with parallel Schottky characteristics (Note F)
10 8
1000 Vds=15V Id=6.9A 900 800 f=1MHz Vgs=0V
Capacitance (pF)
700 600 500 400 300 200 100 Crss 0 5 10 15 20 25 30 Coss (FET + Schottky) Ciss
Vgs (Volts)
6 4 2 0 0 2 4 6 8 10 12 14 Qg (nC) Figure 7: Gate-Charge characteristics
0 Vds (Volts) Figure 8: Capacitance Characteristics: MOSFET + Parallel Schottky
100 Rds(on) limited
Tj(max.)=150°C Ta=25°C 1ms 10ms 0.1s 100Ps 10Ps
40 Tj(max.)=150°C Ta=25°C 30
Id (Amps)
10
Power W
1s 10s DC
20
1
10
0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZT ja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Pd Ton Single Pulse
T 100 1000
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
30 -10V 25 20 -6V -5V -4.5V
30 Vds=-5V 25 20
-4V
-Id (A)
-Id (A)
-3.5V
15 10 5 Vgs=-3V 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics
15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -Vgs (Volts) Figure 2: Transfer Characteristics 1.60 Id=-6A 125°C 25°C
60 Vgs=-4.5V
50
Normalized On-Resistance
55
Rds(on) (m: )
45 40 35 30 25 20 15 10 0 5 10 15 20 25 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 90 80 Id=-6A Vgs=-10V
1.40
Vgs=-10V
1.20
Vgs=-4.5V
1.00
0.80 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 125°C
Rds(on) (m: )
-Is (A)
125°C
70 60 50
1.0E-02 1.0E-03 1.0E-04
40 25°C 30 1.0E-06 20 3 6 7 8 9 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4 5 0.0 0.2 0.4 1.0E-05
25°C
0.6
0.8
1.0
-Vsd (Volts) Figure 6: Body-Diode Characteristics
10 Vds=-15V Id=-6A 8
1500 1250 Ciss
Capacitance (pF)
-Vgs (Volts)
1000 750 500 Coss 250 0 Crss
6 4 2 0 0 4 8 12 16 20 -Qg (nC) Figure 7: Gate-Charge Characteristics
0
5
10
15
20
25
30
-Vds (Volts) Figure 8: Capacitance Characteristics
100.0 Tj(max.)=150°C, Ta=25°C Rds(on) limited 0.1s 1.0 10Ps 100Ps 1ms 10ms 1s 10s 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC
40 Tj(max.)=150°C Ta=25°C 30
-Id (Amps)
Power (W)
10.0
20
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZT ja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Pd 0.1 Ton Single Pulse 0.01 0.00001 T
0.0001
0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
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