ELM14609AA-N

30 4V 25 20 10V 4.5V 3.5V 2.00E+01 Vds=5V 1.60E+01 Id (A) 15 10 Vgs=3V 5 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 28 26 Vgs=4.5V Id (A) 1.20E+01 125°C 8.00E+00 25°C 4.00E+00 0.00E+00 1.5 2 2.5 3 3.5 4 Vgs (Volts) Figure 2: Transfer Characteristics 1.6 Normalized On-Resistance Vgs=10V Id=8.5A 1.4 Vgs=4.5V 1.2 Rds(on) (m: ) 24 22 20 18 16 14 0 5 10 15 20 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Vgs=10V 1 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 50 1.0E+01 1.0E+00 40 Rds(on) (m: ) Id=8.5A 1.0E-01 Is (A) 125°C 1.0E-02 25°C 1.0E-03 30 125°C 20 25°C 1.0E-04 1.0E-05 10 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 10 8 Vgs (Volts) 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics Vds=15V Id=8.5A Capacitance (pF) 1500 1250 Ciss 1000 750 500 250 0 0 Crss 5 10 15 20 25 30 Coss Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Rds(on) limited 1ms 10ms 0.1s 100Ps 10Ps Power (W) 50 40 30 20 10 0 0.001 Tj(max.)=150°C Ta=25°C Id (Amps) 10.0 1.0 Tj(max.)=150°C Ta=25°C 0.1 0.1 1 1s 10s DC 10 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 20 -5V -10V 15 -4.5V -4V 10 Vds=-5V 8 25°C -Id (A) 10 -3V 5 -2.5V -Id (A) Vgs=-3.5V 6 125°C 4 2 -2.0V 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 250 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -Vgs (Volts) Figure 2: Transfer Characteristics 1.6 Normalized On-Resistance Vgs=-2.5V 200 Vgs=-10V 1.4 Vgs=-4.5V Rds(on) (m: ) Vgs=-2.5V 1.2 Id=-2A 1 150 Vgs=-4.5V 100 Vgs=-10V 50 0 1 2 3 4 5 6 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 300 250 Id=-2A 1.0E+01 1.0E+00 1.0E-01 125°C 1.0E-02 150 HIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1.0E-03 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARIS 25°C OUT OF100 SUCH APPLICATIONS OR USES OF 25°C ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1.0E-04 UNCTIONS AND RELIABILITY WITHOUT NOTICE. 50 1.0E-05 Rds(on) (m: ) 200 -Is (A) 125°C 0 0 2 4 6 8 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -Vsd (Volts) Figure 6: Body-Diode Characteristics 5 Vds=-15V Id=-3A 4 Capacitance (pF) -Vgs (Volts) 3 2 1 0 0 1 2 3 4 5 -Qg (nC) Figure 7: Gate-Charge Characteristics 600 500 400 300 200 Coss 100 0 0 5 10 15 20 25 30 -Vds (Volts) Figure 8: Capacitance Characteristics Crss Ciss 100.0 Tj(max.)=150°C Ta=25°C -Id (Amps) Power (W) 10.0 Rds(on) limited 1.0 1s 10s DC 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10Ps 100Ps 1ms 10ms 0.1s 20 Tj(max.)=150°C Ta=25°C 15 10 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISI Pd OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 0.1 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance