30 10V 25 4V 20 5V 4.5V
20 16 12 8 125°C 4 Vgs=3V 0 25°C 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Vds=5V
Id (A)
15 3.5V 10 5 0 0 1 2 3 4 Vds (Volts) Fig 1: On-Region Characteristics
Id (A)
Vgs (Volts) Figure 2: Transfer Characteristics
40
1.6
Normalized On-Resistance
35
Vgs=4.5V
1.5 1.4 1.3 1.2 1.1 1 0.9 0.8
Vgs=10V Id=7.2A
Rds(on) (m: )
30 25 20 15 10 0 5 10 15 20 Id (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Vgs=10V
Vgs=4.5V Id=4A
0
25
50
75
100
125
150
175
Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature
70
1.0E+01
Id=7.2A
60 1.0E+00 1.0E-01 125°C 40 30 20 10 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C
Rds(on) (m: )
Is Amps
50
1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0
125°C
25°C
0.2
0.4
0.6
0.8
1.0
Vsd (Volts) Figure 6: Body diode characteristics
10 8 Vgs (Volts) 6 4 2 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge characteristics Vds=15V Id=7.2A Capacitance (pF)
1000 900 800 700 600 500 400 300 200 100 0 0 5 10 15 20 25 30 Vds (Volts) Figure 8: Capacitance Characteristics Crss Coss Ciss f=1MHz Vgs=0V
100 Rds(on) limited Id (Amps) 10 1ms 10ms 0.1s 1 1s 10s DC 0.1 0.1 1 Vds (Volts) 10
Tj(max.)=150°C Ta=25°C 100Ps 10Ps Power W
40 Tj(max.)=150°C Ta=25°C 30
20
10
100
0 0.001
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Pd Ton Single Pulse
T 100 1000
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
30 -10V 25 20 -6V -5V -4V -4.5V
25 Vds=-5V 20
-Id (A)
15 10
-3.5V
-Id (A)
15
10 Vgs=-3V 5 -2.5V 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 0 0 1 2 3 4 5 6 -Vgs (Volts) Figure 2: Transfer Characteristics 1.60 125°C 25°C
5
90
Normalized On-Resistance
80
Rds(on) (m: )
70 60 50 40 30 20 0 5 10 15 20 25 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 90 80 Id=-6.1A Vgs=-10V Vgs=-4.5V
1.40
Vgs=-10V Id=-6.1A Vgs=-4.5V Id=-4
1.20
1.00
0.80 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01
Rds(on) (m: )
70
125°C
-Is (A)
60 125°C 50 40 30 20 10 3 4 5 6 7 8 9 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C
1.0E-02 1.0E-03 1.0E-04 25°C 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics
10 8 -Vgs (Volts) Vds=-15V Id=-6.1A Capacitance (pF)
1500 1250 Ciss 1000 750 500 250 0 0 4 8 12 16 20 0 5 10 15 20 25 30 -Qg (nC) Figure 7: Gate-Charge Characteristics -Vds (Volts) Figure 8: Capacitance Characteristics Coss Crss
6 4
2 0
100.0 Tj(max.)=150°C, Ta=25°C Rds(on) limited 0.1s 1.0 10Ps 100Ps 1ms 10ms 1s 10s 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC
40 Tj(max.)=150°C Ta=25°C 30 Power (W)
-Id (Amps)
10.0
20
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Pd Ton
Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1
T 100 1000
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
很抱歉,暂时无法提供与“ELM14613AA-N”相匹配的价格&库存,您可以联系我们找货
免费人工找货