ELM14614AA-N

30 10V 25 20 5V 4.5V 20 Vds=5V 15 Id (A) 15 10 Vgs=3.5V 5 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics Id (A) 4V 10 125°C 5 25°C 0 2 2.5 3 3.5 4 4.5 Vgs (Volts) Figure 2: Transfer Characteristics 1.8 50 Normalized On-Resistance 1.6 Vgs=10V Id=6A Rds(on) (m: ) 40 Vgs=4.5V 1.4 Vgs=4.5V Id=5A 30 Vgs=10V 1.2 1 20 0 5 10 15 20 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 80 70 60 Id=6A 1.0E+01 1.0E+00 1.0E-01 125°C 125°C Rds(on) (m: ) Is (A) 50 40 30 20 25°C 10 2 4 6 8 10 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 25°C Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 10 8 Vgs (Volts) 6 4 2 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics Vds=20V Id= 6A Capacitance (pF) 800 600 Ciss 400 Coss 200 Crss 0 0 10 20 30 40 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Rds(on) limited 10.0 10ms 1s 1.0 Tj(max.)=150°C Ta=25°C 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s DC 0.1s 100Ps 1ms 10Ps Power (W) 40 Tj(max.)=150°C Ta=25°C 30 Id (Amps) 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 30 -10V 25 -6V 20 -5V -4.5V 25 Vds=-5V 20 -4V -Id (A) 15 -3.5V 10 5 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics Vgs=-3V -Id (A) 15 10 125°C 25°C 5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 -Vgs (Volts) Figure 2: Transfer Characteristics 60 1.8 Normalized On-Resistance 55 Vgs=-4.5V 1.6 Vgs=-10V Id=-5A Rds(on) (m:) 50 45 40 Vgs=-10V 35 30 0 2 4 6 8 10 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 160 140 Id=-5A 1.4 Vgs=-4.5V Id=-4A 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 125°C 1.0E-01 125°C Rds(on) (m:) 120 -Is (A) 100 80 60 40 25°C 20 2 3 4 1.0E-02 1.0E-03 1.0E-04 1.0E-05 25°C 5 6 7 8 9 10 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 10 8 -Vgs (Volts) Vds=-20V Id=-5A Capacitance (pF) 1000 800 Ciss 6 4 600 400 Coss Crss 2 0 0 5 10 15 -Qg (nC) Figure 7: Gate-Charge Characteristics 200 0 0 10 20 30 40 -Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Tj(max.)=150°C, Ta=25°C Rds(on) limited 0.1s 1.0 1s 10s 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 100Ps 1ms 10ms 10Ps Power (W) 40 Tj(max.)=150°C Ta=25°C 30 -Id (Amps) 10.0 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Pd 0.1 Ton Single Pulse 0.01 0.00001 T 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000