ELM14616AA-N

30 4V 25 20 10V 4.5V 3.5V 2.00E+01 Vds=5V 1.60E+01 15 10 Vgs=3V 5 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 28 Id (A) Id (A) 1.20E+01 125°C 8.00E+00 25°C 4.00E+00 0.00E+00 1.5 2 2.5 3 3.5 4 Vgs (Volts) Figure 2: Transfer Characteristics 1.6 Vgs=4.5V Normalized On-Resistance 26 Vgs=10V Id=8.1A 1.4 2 24 Rds(on) (m: ) 24 22 20 18 16 14 0 5 10 15 20 Vgs=10V 1.2 Vgs=4.5V Id=6A 1 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 Id=8.1A 1.0E+01 1.0E+00 40 125°C 1.0E-02 125°C 25°C HIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1.0E-03 OMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN 30 UT OF 20 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 25°C 1.0E-04 UNCTIONS AND RELIABILITY WITHOUT NOTICE 10 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics Rds(on) (m: ) 1.0E-01 Is (A) 10 8 Vgs (Volts) 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics Vds=15V Id=8.1A Capacitance (pF) 1500 1250 Ciss 1000 750 500 250 0 0 Crss 15 20 25 Vds (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss 100.0 Rds(on) limited 10.0 1ms 10ms 0.1s 1.0 Tj(max.)=150°C Ta=25°C 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1s 10s DC 100 Ps 10Ps Power (W) 50 40 30 20 10 0 0.001 Tj(max.)=150°C 2 Ta=25°C 24 Id (Amps) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=T on/T Tj,pk=T a+Pdm.ZTja.RTja RTja=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 HIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL Pd OMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DNOT ASSUME ANY LIABILITY ARISING 0.1 UNCTIONS AND RELIABILITY WITHOUT NOTICE Single Pulse 0.01 0.00001 0.0001 0.001 UT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton T 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 30 -10V 25 -4V 20 -5V 30 Vds=-5V 25 20 -Id (A) -Id (A) -3.5V Vgs=-3V 15 10 5 0 0 1 2 3 4 5 -Vds (Volts) Fig 16: On-Region Characteristics 15 10 5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 -Vgs (Volts) Figure 17: Transfer Characteristics 1.60 125°C 25°C 40 35 Normalized On-Resistance Vgs=-4.5V Id=-7.1A 1.40 Vgs=-10V Rds(on) (m: ) 30 25 Vgs=-10V 20 15 10 0 5 10 15 20 25 -Id (A) Figure 18: On-Resistance vs. Drain Current and Gate Voltage 60 Id=-7.1A 50 1.20 Vgs=-4.5V Id=-5.6A 1.00 0.80 0 25 50 75 100 125 150 175 Temperature (°C) Figure 19: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 Rds(on) (m: ) 125°C -Is (A) 40 125°C 30 1.0E-02 1.0E-03 1.0E-04 20 25°C 1.0E-05 1.0E-06 25°C 10 3 4 5 6 7 8 9 10 -Vgs (Volts) Figure 20: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 21: Body-Diode Characteristics 10 Vds=-15V Id=-7.1A 8 Capacitance (pF) -Vgs (Volts) 2250 2000 1750 1500 1250 1000 750 500 250 Coss Crss Ciss 6 4 2 0 0 4 8 12 16 20 24 28 32 -Qg (nC) Figure 22: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 -Vds (Volts) Figure 23: Capacitance Characteristics 100.0 Tj(max.)=150°C, Ta=25°C Rds(on) limited 0.1s 10Ps 100Ps 1ms 10ms 1.0 1s 10s 0.1 0.1 1 -Vds (Volts) Figure 24: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 40 Tj(max.)=150°C Ta=25°C 30 Power (W) -Id (Amps) 10.0 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 25: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance