ELM14704AA-N

60 50 40 Vgs =2.5V 30 Vgs=5V 25 20 Id (A) Id (A) 30 20 10 0 0 1 2 3 4 5 Vds (Volts) Figure 1: On-Regions Characteristics Vgs =2.0V 15 10 5 0 0.0 0.5 1.0 125°C 25°C 1.5 2.0 2.5 3.0 Vgs (Volts) Figure 2: Transfer Characteristics 13 1.8 Id=13A Normalize ON-Resistance 12 Rds(on) (m: ) 11 10 9 8 7 0 5 10 Vgs =4.5V 1.6 1.4 1.2 1.0 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature Vgs=4.5V Vgs=10V Vgs =10V 15 20 25 30 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 25 Id=13A 1E+01 1E+00 Rds(on) (m: ) Is (A) 20 15 10 5 25°C 125°C 25°C 125°C 1E-01 1E-02 FET+SCHOTTKY 1E-03 0.0 0.2 0.4 0.6 0.8 1.0 0 0 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Vsd (Volts) Figure 6: Body-Diode Characteristics (Note F) 5 Vds=15V Id=13A 10000 Ciss 4 3 Capacitance (pF) Vgs (Volts) 1000 Coss FET+SCHOTTKY 2 1 Crss 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 100 0 5 10 15 20 25 30 Vds (Volts) Figure 8: Capacitance Characteristics 100 Rds(on) limited 10 10ms 1s 1 Tj(max) =150°C Ta =25°C 0.1 0.1 1 10 10s DC 10Ps 100Ps 50 40 Power (W) 100 1ms 0.1s Id (A) 30 20 10 0 0.01 0.1 1 10 100 1000 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T T j,pk =Ta+Pdm.ZTja .RTja RTja =40°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (S) Figure 11: Normalized Maximum Transient Thermal Impedence