ELM14801AA-N

25 -10V 20 -4.5V -3V 10 Vds=-5V 8 -Id (A) -2.5V 10 Vgs=-2V -Id (A) 15 6 125°C 4 5 0 0 1 2 2 25°C 0 3 4 5 0 0.5 1 1.5 2 2.5 3 -Vds (Volts) Fig 1: On-Region Characteristics -Vgs (Volts) Figure 2: Transfer Characteristics 1.6 120 100 Normalized On-Resistance Rds(on) (m: ) 1.4 Id=-5A Vgs=-4.5V Vgs=-10V 80 60 40 Vgs=-2.5V 1.2 Vgs=-2.5V Id=-2A Vgs=-4.5V 1 Vgs=-10V 20 0 2 4 6 8 10 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 190 170 150 Id=-2A 1.0E+01 1.0E+00 1.0E-01 125°C Rds(on) (m: ) 130 -Is (A) 125°C 110 90 70 50 30 10 0 2 4 6 8 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -Vsd (Volts) Figure 6: Body-Diode Characteristics 5 Vds=-15V Id=-5A 4 1400 1200 Capacitance (pF) 1000 800 600 400 Coss 200 Crss Ciss -Vgs (Volts) 3 2 1 0 0 2 4 6 8 10 12 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 -Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Tj(max)=150°C Ta=25°C Rds(on) limited 0.1s 40 10Ps Tj(max)=150°C Ta=25°C 30 -Id (Amps) 1ms 10ms 1.0 1s 10s DC 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 Power (W) 10.0 100Ps 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance