20 -10V 15 -4V -6V -5V -4.5V
10 Vds=-5V
8
-Id (A)
10 -3.5V 5 Vgs=-3V
-Id (A)
6
4
125°C
2 -2.5V
25°C
0 0.00
0 1.00 2.00 3.00 4.00 5.00 0 1 2 3 4 -Vds (Volts) Figure 1: On-Region Characteristics -Vgs (Volts) Figure 2: Transfer Characteristics 1.60E+00
100
80
Normalized On-Resistance
Vgs=-4.5V 1.40E+00 Vgs=-10V
Rds(on) (m: )
Vgs=-4.5V 60 Vgs=-10V 40
1.20E+00
1.00E+00
Id=-5A
20 1 3 5 7 9 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
8.00E-01 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
160 140 120 Id=-5A
1E+01 1E+00 1E-01 125°C
Rds(on) (m: )
-Is (A)
100 80 60 40 20 2 4 6 8 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 125°C
1E-02 1E-03 1E-04 1E-05 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -Vsd (Volts) Figure 6: Body-Diode Characteristics 25°C
10 Vds=-15V Id=-5A 8
1200 1000 Ciss
Capacitance (pF)
-Vgs (Volts)
800 600 400 Coss 200 0 Crss 0 5 10 15 20 25 30
6 4 2 0 0 2 4 6 8 10 12 14 16 -Qg (nC) Figure 7: Gate-Charge Characteristics
-Vds (Volts) Figure 8: Capacitance Characteristics
100
Tj(max)=150°C Ta=25°C Rds(on) limited
40 10Ps Tj(max)=150°C Ta=25°C 30
-Id (Amps)
1ms 0.1s 1 1s 10s DC 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10ms
Power (W)
10
100Ps
20
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
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