50 45 40 35 10V 6V 7V 5V
30 25 20 Vds=5V
Id (A)
25 20 15 10 5 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 45 40 Vgs=3V 3.5V
Id (A)
30
15 125°C 10 5 0 2 2.5 3 3.5 4 4.5 5 5.5 Vgs (Volts) Figure 2: Transfer Characteristics 1.8 25°C
Normalized On-Resistance
35
Rds(on) (m: )
Vgs=4.5V
1.6
Id=8.5A Vgs=10V
30 25 20 15 10 5 0 5 10 15 20 25 30 Vgs=20V Vgs=10V
1.4 Vgs=20V 1.2
1
0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
60 50
1.0E+01 1.0E+00 Id=8.5A 1.0E-01
Rds(on) (m: )
40 30
Is (A)
125°C 1.0E-02 25°C 1.0E-03
125°C 20 10 0 0 5 10 15 20
25°C
1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics
Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
10 8 Vds=15V Id=8.5A
1200 1000
Capacitance (pF)
Vgs (Volts)
800 600 400 Coss 200 Crss 0
Ciss
6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics
0
5
10
15
20
25
30
Vds (Volts) Figure 8: Capacitance Characteristics
100.0
Rds(on) limited 10Ps
30 25 Tj(max)=150°C Ta=25°C
10ms 0.1s 1.0 Tj(max)=150°C Ta=25°C 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1s 10s DC
Power (W)
Id (Amps)
10.0
1ms
100Ps
20 15 10 5 0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZT ja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 Single Pulse 0.01 0.00001
Pd Ton T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
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