ELM14817AA-N

30 -10V -6V 20 -5V 25 Vds=-5V 20 -Id (A) -4.5V 10 Vgs=-4V 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 20 Vgs=-10V 19 -Id (A) 15 125°C 10 5 25°C 0 2 2.5 3 3.5 4 4.5 5 -Vgs (Volts) Figure 2: Transfer Characteristics 1.6 Normalized On-Resistance Rds(on) (m: ) 1.4 18 17 16 15 14 0 5 10 15 20 25 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Vgs=-20V Id=-8A Vgs=-10V Id=-8A 1.2 Vgs=-20V 1 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 Id=-8A 50 1.0E+01 1.0E+00 1.0E-01 125°C OMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARIS 1.0E-03 UT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 30 NCTIONS AND RELIABILITY WITHOUT NOTICE. 125°C 1.0E-04 25°C 20 1.0E-05 25°C 10 0 5 10 15 20 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -Vsd (Volts) Figure 6: Body-Diode Characteristics -Is (A) IS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 40 1.0E-02 Rds(on) (m: ) 10 Vds=-15V Id=-8A 8 2500 2000 Ciss 6 4 Capacitance (pF) -Vgs (Volts) 1500 1000 Coss 500 Crss 2 0 0 5 10 15 20 25 30 35 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 -Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Rds(on) limited 100Ps 1ms 10ms 0.1s 1.0 1s Tj(max)=150°C 10s Ta=25°C 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10Ps 40 Tj(max)=150°C Ta=25°C 30 -Id (Amps) Power (W) 10.0 20 10 DC 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 1 HIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL OMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISI UNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.1 UT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Pd Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse T Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance