ELM14818AA-N

ELM14818AA-N

  • 厂商:

    ELM-TECH

  • 封装:

  • 描述:

    ELM14818AA-N - Dual N-channel MOSFET - ELM Technology Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
ELM14818AA-N 数据手册
30 4V 25 20 10V 4.5V 3.5V 2.00E+01 Vds=5V 1.60E+01 Id (A) 1.20E+01 15 10 Vgs=3V 5 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 28 1.6 Vgs=10V Vgs=4.5V 4.00E+00 Id(A) 125°C 8.00E+00 25°C 0.00E+00 1.5 2 2.5 3 3.5 4 Vgs(Volts) Figure 2: Transfer Characteristics Normalized On-Resistance 26 Id=8.5A 1.4 Vgs=4.5V 1.2 Rds(on) (m: ) 24 22 20 18 16 14 0 5 10 15 20 Vgs=10V 1 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 1.0E+01 1.0E+00 40 Rds(on) (m: ) Id=8.5A 1.0E-01 Is (A) 125°C 1.0E-02 125°C 25°C HIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1.0E-03 OMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN UT OF 20 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 25°C 1.0E-04 UNCTIONS AND RELIABILITY WITHOUT NOTICE 10 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 30 10 8 Vds=15V Id=8.5A 1500 1250 Capacitance (pF) Ciss 1000 750 500 250 0 Crss 0 5 10 15 20 25 30 Vgs (Volts) 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics Coss Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Rds(on) limited 10.0 1ms 10ms 0.1s 1.0 Tj(max)=150°C Ta=25°C 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1s 10s DC 100 Ps 10Ps 50 40 Tj(max)=150°C Ta=25°C Id (Amps) Power (W) 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 HIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL Pd OMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 0.1 UT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton UNCTIONS AND RELIABILITY WITHOUT NOTICE T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
ELM14818AA-N
1. 物料型号:ELM14818AA-N

2. 器件简介: - ELM14818AA-N采用先进的沟槽技术,提供出色的Rds(on)和低栅极电荷。

3. 引脚分配: - SOP-8封装的引脚配置如下: - 1号引脚:SOURCE2 - 2号引脚:GATE2 - 3号引脚:SOURCE1 - 4号引脚:GATE1 - 5号引脚:DRAIN1 - 6号引脚:DRAIN1 - 7号引脚:DRAIN2 - 8号引脚:DRAIN2

4. 参数特性: - 漏源电压(Vds):30V - 栅源电压(Vgs):±20V - 25°C时连续漏电流(Id):8.5A - 70°C时连续漏电流(Id):6.6A - 脉冲漏电流(Idm):40A - 功率耗散(Pd):25°C时2.00W,70°C时1.28W - 结温和存储温度范围(Tj, Tstg):-55至150°C

5. 功能详解: - 该器件具有低Rds(on)和低栅极电荷,适用于需要高效率和低功耗的应用。 - 提供了详细的电气特性参数,包括静态参数、动态参数和开关参数。

6. 应用信息: - 适用于需要高效率和低功耗的电源管理、电机控制等应用。

7. 封装信息: - 采用SOP-8封装。
ELM14818AA-N 价格&库存

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