ELM14824AA-N

30 4V 25 20 10V 4.5V 3.5V 20 Vds=5V 16 Id (A) 15 10 Vgs=3V 5 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 26 Vgs=4.5V Id (A) 12 125°C 8 13.4 4 25°C 16 26 22 0 1.5 2 2.5 0.76 3 3.5 4 Vgs (Volts) Figure 2: Transfer Characteristics 1.6 Normalized On-Resistance 24 22 Vgs=10V Id=8.5A 1.4 Vgs=4.5V 1.2 Rds(on) (m: ) 20 18 16 Vgs=10V 14 12 10 0 5 10 15 20 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 50 1.0E+01 1.0E+00 40 Rds(on) (m: ) Id=8.5A 1.0E-01 Is (A) 125°C 1.0E-02 25°C 1.0E-03 30 125°C 20 25°C 10 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 10 8 Vds=15V Id=8.5A 1500 1250 Capacitance (pF) Ciss 1000 750 500 250 0 Crss 0 5 10 Vgs (Volts) 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics Coss 13.4 22 15 0.76 20 16 26 25 30 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Rds(on) limited 10.0 1ms 10ms 0.1s 1.0 Tj(max)=150°C Ta=25°C 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1s 10s DC 100Ps 10Ps 50 40 Tj(max)=150°C Ta=25°C Power (W) Id (Amps) 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 40 10V 30 25 Vds=5V 30 4.5V 2.5V 20 Id (A) 20 Vgs=2V 10 Id (A) 15 125°C 10 5 25°C 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 0 0.5 1 1.5 2 2.5 Vgs (Volts) Figure 2: Transfer Characteristics 13 Vgs=4.5V 1.8 Normalized On-Resistance Id=9.8A 1.6 Vgs=4.5V 1.4 Vgs=10V 1.2 Rds(on) (m: ) 12 11 Vgs=10V 10 1 9 0 5 10 15 20 25 30 0.8 0 50 100 150 200 Temperature (°C) Figure 4: On resistance vs. Junction Temperature Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 25 Id=9.8A 1.0E+01 1.0E+00 125°C 1.0E-01 Rds(on) (m: ) 20 125°C 15 10 5 0 2 4 6 8 10 Vgs (Volts) Figure 5: On resistance vs. Gate-Source Voltage 25°C Is (A) 25°C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 5 4 3 2 1 0 0 5 10000 Vds=15V Id=9.8A Ciss f=1MHz Vgs=0V Capacitance (pF) Vgs (Volts) 1000 Coss Crss 100 10 15 20 25 30 35 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Tj(max)=150°C, Ta=25°C Rds(on) limited 10.0 1ms 10ms 0.1s 1.0 1s 10s DC 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 100Ps 10Ps 40 Tj(max)=150°C Ta=25°C 30 Power (W) Id (A) 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance