ELM14826AA-N

40 10V 4V 30 4.5V 30 25 20 Vds=5V 125°C Id (A) 20 3.5V 10 Id (A) 15 10 25°C 5 Vgs=3V 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 0 1.5 2 2.5 3 3.5 4 Vgs (Volts) Figure 2: Transfer Characteristics 2.2 24 Normalized On-Resistance 2 1.8 1.6 1.4 1.2 1 0.8 Vgs=10V Id=6.3A 22 Rds(on) (m: ) Vgs=4.5V 20 Vgs=10V 18 Vgs=4.5V Id=5.7A 16 0 5 10 15 20 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 50 Id=6.3A 40 125°C 1.0E+01 1.0E+00 1.0E-01 125°C Rds(on) (m: ) Is (A) 30 25°C 20 1.0E-02 25°C 1.0E-03 1.0E-04 10 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 10 8 Vds=15V Id=6.3A 3500 3000 Capacitance (pF) 2500 2000 1500 Coss 1000 Crss 500 Ciss Vgs (Volts) 6 4 2 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Rds(on) limited 10.0 10Ps 40 100Ps 1ms 10ms 1s 0.1s Tj(max)=150°C Ta=25°C 30 Power (W) Id (Amps) 20 1.0 Tj(max)=150°C Ta=25°C 0.1 0.1 1 10s DC 10 10 Vds (Volts) 100 0 0.001 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance