ELM14828AA-N

20 10.0 5.0V 15 15 Vds=5V 10 Id (A) Id (A) 4.5V 10 4.0V 5 125°C 5 25°C Vgs=3.5V 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 0 2 2.5 3 3.5 4 4.5 5 Vgs (Volts) Figure 2: Transfer Characteristics 2 100 Normalized On-Resistance 90 80 Vgs=10V 1.8 Id=4.5A 1.6 Vgs=4.5V 1.4 1.2 1 0.8 Id=3.0A Rds(on) (m:) 70 60 50 40 30 20 0 5 Vgs=4.5V Vgs=10V 10 15 20 0 25 50 75 100 125 150 175 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 160 140 Id=4.5A 1.0E+01 1.0E+00 1.0E-01 125°C 125°C Rds(on) (m:) 120 Is (A) 100 80 1.0E-02 1.0E-03 25°C 25°C 60 40 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 10 8 Vds=30V Id= 4.5A 800 Capacitance (pF) 600 Ciss 400 Coss Crss 0 Vgs (Volts) 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 Qg (nC) Figure 7: Gate-Charge Characteristics 200 0 10 20 30 40 50 60 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Rds(on) limited 10.0 10ms 1s 1.0 Tj(max.)=150°C Ta=25°C 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s DC 0.1s 1ms 10Ps 40 100Ps Tj(max.)=150°C Ta=25°C 30 Id (Amps) Power (W) 20 10 0 0.001 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 0.01 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance