30 4V 25 20 10V 4.5V 3.5V
30 25 20 Vds=5V
Id (A)
Id (A)
125°C 15 10 5 0 25°C
15 10 5 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics
Vgs=3V
1
1.5
2
2.5
3
3.5
4
Vgs (Volts) Figure 2: Transfer Characteristics 1040
26
1.7
180 110 0.7
Id=8.5A Vgs=4.5V Vgs=10V
Rds(on) (m:)
22
Vgs=4.5V
Normalized On-Resistance
1.6 1.5 1.4
18
VGS=10V, VDS=15V, RL=1.8:, 1.3GEN=3: R
14 Vgs=10V 1.2 1.1 1 0.9 0 50 100 150 200 Temperature (°C) Figure 4: On resistance vs. Junction Temperature
10 0 5 10 15 20 25 30 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
60 50 Id=8.5A
1.0E+01 1.0E+00 1.0E-01 125°C
Rds(on) (m:)
Is (A)
40 30 125°C 20 10 2 4 25°C 6 8 10
1.0E-02 1.0E-03
25°C
FET+SCHOTTKY 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics (Note 6)
Vgs (Volts) Figure 5: On resistance vs. Gate-Source Voltage
10 8 Vds=15V Id=8.5A
1500 1250 Ciss f=1MHz Vgs=0V
Capacitance (pF)
Vgs (Volts)
1000 750 500 Crss 250
6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics
0 0 5 10 15 20 25 30 Vds (Volts) Figure 8: Capacitance Characteristics
100.0
Tj(max)=150°C, Ta=25°C Rds(On) limited 100Ps 10Ps
40
1040 180 110 0.7
30
Tj(max)=150°C Ta=25°C
10ms 0.1s 1.0
Power (W)
10.0
1ms
Id (A)
20
VGS=10V, VDS=15V, RL=1.8:, RGEN=3:
1s 10s DC 10
0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
10
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Pd Ton
0.01 0.00001
Single Pulse 0.0001 0.001 0.01 0.1 1
T 10 100 1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
30 10V 25 20 3.5V
20 16 4.5V 3V 12 8 Vds=5V
Id (A)
15 10 Vgs=2.5V 5 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics
Id (A)
4 0 0 0.5 1 1.5
125°C
25°C
2
2.5
3
3.5
Vgs (Volts) Figure 2: Transfer Characteristics
30
1.8
Normalized On-Resistance
28
Id=7A 1.6 Vgs=4.5V 1.4 1.2 1 0.8 0 50 100 150 200 Temperature (°C) Figure 4: On resistance vs. Junction Temperature Vgs=10V
Rds(on) (m:)
26 24 22
Vgs=4.5V
Vgs=10V 20 18 16 0 5 10 15 20 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
70 60 Id=7A
1.0E+01 1.0E+00 1.0E-01 125°C
Rds(on) (m:)
Is (A)
125°C
50 40 30 25°C 20
1.0E-02 1.0E-03 1.0E-04 1.0E-05 25°C
10 2 4 6 8 10 Vgs (Volts) Figure 5: On resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
Vsd (Volts) Figure 6: Body-Diode Characteristics
5 4 Vds=15V Id=7A
750 Ciss f=1MHz Vgs=0V
Capacitance (pF)
Vgs (Volts)
500
3 2 1 0 0 1 2 3 4 5 6 Qg (nC) Figure 7: Gate-Charge Characteristics
250 Crss 0 0 5
Coss
10
15
20
25
30
Vds (Volts) Figure 8: Capacitance Characteristics
100.0 Tj(max)=150°C, Ta=25°C Rds(on) limited 100Ps 1ms 10ms 0.1s 1.0 1s 10s DC 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 100
40 Tj(max)=150°C Ta=25°C
10Ps
30
Power (W)
10.0
Id (A)
20
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
10
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Pd Ton
0.01 0.00001
Single Pulse 0.0001 0.001 0.01 0.1 1
T 10 100 1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
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