ELM16404EA-N

40 10 35 30 25 2.5V 4.5V 2V 30 Vds=5V 25 20 Id (A) 20 15 10 5 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 30 25 Vgs=1.5V Id(A) 15 10 125°C 5 25°C 0 0 1 1.5 2 Vgs(Volts) Figure 2: Transfer Characteristics 0.5 2.5 1.6 Normalized On-Resistance Vgs=1.8V Id=5A 1.4 Vgs=4.5V Vgs=2.5V Rds(on) (m: ) 20 15 10 5 0 5 Vgs=2.5V Vgs=4.5V Vgs=10V Vgs=10V 1.2 Vgs=1.8V 1 0.8 10 15 20 0 25 50 75 100 125 150 175 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 40 35 30 Id=5A 10 1 125°C 0.1 125°C Rds(on) (m: ) 25 Is (A) 20 15 25°C 10 5 0 0 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.01 25°C 0.001 0.0001 0.00001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Vsd (Volts) Figure 6: Body-Diode Characteristics 5 4 Vds=10V Id=8A 3000 2500 Capacitance (pF) Vgs (Volts) 2000 1500 1000 500 0 Ciss 3 2 1 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics Coss Crss 0 5 10 15 20 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 40 Rds(on) limited Tj(max)=150°C Ta=25°C Id (Amps) Power (W) 10.0 100Ps 1ms 10ms 10Ps 30 20 1.0 Tj(max)=150°C Ta=25°C 0.1 0.1 1 1s DC 0.1s 10 10 Vds (Volts) 100 0 0.001 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance